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Home > Products > Semiconductor Plastic Package > Bi Directions Thyristor (Triac) > 65R72GF N-channel Power MOSFET as replacement of STW48N60M2
65R72GF N-channel Power MOSFET as replacement of STW48N60M2
65R72GF N-channel Power MOSFET as replacement of STW48N60M2
  • 65R72GF N-channel Power MOSFET as replacement of STW48N60M2
  • 65R72GF N-channel Power MOSFET as replacement of STW48N60M2

65R72GF N-channel Power MOSFET as replacement of STW48N60M2

    Unit Price: USD 3.2 - 4.25 / Piece/Pieces
    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF

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Basic Info

Model No.YZPST-65R72GF

BrandYZPST

Place Of OriginChina

Vds (V) At Tj Max.700

Rds(ofi)max. At 25°C (mQ)Vgs=10V 72

Qg Max. (nC)130

Qgs (nC)30

Qgd (nC)34

Configurationsingle

Additional Info

Packaging1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity1000

TransportationOcean,Air

Place of OriginChina

Supply Ability10000

CertificateISO9001-2008,ROHS

HS Code85413000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Product Description

N-channel Power MOSFET


Type:YZPST-65R72GF


PRODUCT SUMMARY
Vds (V) at Tj max. 700
Rds(ofi)max. at 25°C (mQ) Vgs=10V 72
Qg max. (nC) 130
Qgs (nC) 30
Qgd (nC) 34
Configuration single
Features
Fast Body Diode MOSFET
|D=47A(Vgs=10V)
Ultra Low Gate Charge
Improved dv/dt Capability
RoHS compliant
65R72GF N-channel Power MOSFET as replacement of STW48N60M2


Applications

Switching Mode Power Supplies (SMPS)
Server and Telecom Power Supplies
Welding& Battery Chargers
Solar(PV Inverters)
AC/DC Bridge Circuits


ORDERING INFORMATION
Device YZPST-65R72GF
Device Package TO-247
Marking 65R72GF
ABSOLUTE MAXIMUM RATINGS (Tc=25oC, unless otherwise noted)
Parameter Symbol Limit Unit
Drain to Source Voltage Vdss 650 V
Continuous Drain Current (@Tc=25°C) Id 47⑴ A
Continuous Drain Current (@Tc=100°C) 29⑴ A
Drain current pulsed (2) Idm 138⑴ A
Gate to Source Voltage Vgs ±30 V
Single pulsed Avalanche Energy(3) Eas 1500 mJ
MOSFET dv/dt ruggedness (@VDS=0~400V) dv/dt 25 V/ns
Peak diode Recovery dv/dt ⑷ dv/dt 15 V/ns
Total power dissipation (@Tc=25°C) Pd 417 W
Derating Factor above 25°C 3.34 w/°c
Operating Junction Temperature & StorageTemperature Tstg, Tj -55to + 150 °C
Maximum lead temperature for soldering purpose Tl 260 °C

Notes

1. Drain current is limited by maximum junction temperature.

2. Repetitive rating : pulse width limited by junction temperature.

3 L = 37mH, lAS = 9A, VDD = 50V, RG=25Q, Starting at Tj = 25°C

4. ISD < lD, di/dt = WOA/us, VDD < BVDSS, Starting at Tj =25°C


Product Categories : Semiconductor Plastic Package > Bi Directions Thyristor (Triac)

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