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YANGZHOU POSITIONING TECH CO., LTD.
SOT-223 Z0103MN Standard 1A triac
SOT-223 Z0103MN Standard 1A triac
SOT-223 Z0103MN Standard 1A triac
SOT-223 Z0103MN Standard 1A triac
SOT-223 Z0103MN Standard 1A triac
  • SOT-223 Z0103MN Standard 1A triac
  • SOT-223 Z0103MN Standard 1A triac
  • SOT-223 Z0103MN Standard 1A triac
  • SOT-223 Z0103MN Standard 1A triac
  • SOT-223 Z0103MN Standard 1A triac

SOT-223 Z0103MN Standard 1A triac

    Unit Price: USD 0.02 - 0.03 / Piece/Pieces
    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF

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Basic Info

Model No.YZPST-Z0103MN

BrandYZPST

Place Of OriginChina

IT(RMS)1A

I²t0.35A² s

DI/dt20A/µs

IGM1A

PG(AV)1W

Tstg- 40 to + 150℃

Tj- 40 to + 125℃

Additional Info

Productivity10000000000

TransportationOcean,Land,Air,Others

Place of OriginCHINA

Supply Ability10000000000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Product Description

Standard 1A Triacs P/N:YZPST-Z0103MN0

Features
On-state rms current, IT(RMS) 1 A
Repetitive peak off-state voltage, V DRM/VRRM 800 V
Triggering gate current, IGT (Q1) 3 to 25 mA
Description
The Z01 series is suitable for general purpose AC switching applications. These devices are
typically used in applications such as home
appliances (electrovalve, pump, door lock, small lamp control), fan speed controllers,...
Different gate current sensitivities are available, allowing optimized performance when driven
directly through microcontrollers.

 

YZPST-Z0103MN

 

Table 1.       Absolute maximum ratings

Symbol

Parameter

Value

Unit

 

IT(RMS)

On-state rms current

(full sine wave)

SOT-223

T tab = 90 °C

 

1

 

A

TO-92

TL = 50 °C

SMBflat-3L

T tab = 107 °C

ITSM

Non repetitive surge peak on-state   current  (full cycle, Tj initial = 25 °C)

F = 50 Hz

t = 20 ms

8

A

F = 60 Hz

t = 16.7 ms

8.5

I²t

I²t Value for fusing

tp = 10 ms

0.35

²

A s

dI/dt

Critical rate of rise of on-state current IG = 2 x I GT  , tr  100 ns

F = 120 Hz

Tj = 125 °C

20

A/µs

IGM

Peak gate current

tp = 20 µs

Tj = 125 °C

1

A

PG(AV)

Average gate power dissipation

Tj = 125 °C

1

W

Tstg

Tj

Storage junction temperature range

Operating junction temperature range

- 40 to + 150

- 40 to + 125

°C

Table 2.       Electrical characteristics (Tj = 25 °C, unless otherwise specified)

 

Symbol

 

Test conditions

 

Quadrant

 

Z01

 

Unit

03

07

09

10

I GT (1)

VD = 12 V,

RL = 30 Ω

I - II - III

MAX.

3

5

10

25

mA

IV

5

7

10

25

VGT

ALL

MAX.

1.3

V

 

VGD

VD = VDRM,

RL = 3.3 kΩ,

Tj = 125 °C

 

ALL

 

MIN.

 

0.2

 

V

IH (2)

IT = 50 mA

MAX.

7

10

10

25

mA

IL

IG = 1.2 I GT

I - III - IV

MAX.

7

10

15

25

mA

II

15

20

25

50

dV/dt (2)

VD =  67% V DRM   gate open Tj = 110 °C

MIN.

10

20

50

100

V/µs

(dV/dt)c

(2)

(dI/dt)c = 0.44 A/ms,

Tj = 110 °C

MIN.

0.5

1

2

5

V/µs

 

1.   Minimum I GT is guaranteed at 5% of IGT max.

 

2.   For both polarities of A2 referenced to A1.

Table 3.       Static characteristics

Symbol Test conditions Value Unit
VTM(1) ITM = 1.4 A, tp = 380 µs Tj = 25 °C MAX. 1.6 V
V to (1) Threshold voltage Tj = 125 °C MAX. 0.95 V
R(1) Dynamic resistance Tj = 125 °C MAX. 400 mΩ
I DRM V DRM = VRRM Tj = 25 °C MAX. 5 µA
IRRM Tj = 125 °C 0.5 mA

1.   For both polarities of A2 referenced to A1.

Table 4.       Thermal resistances

Symbol Parameter Value Unit
Rth(j-t) Junction to tab (AC) SOT-223   25  
Rth(j-t) Junction to tab (AC) SMBflat-3L   14  
Rth(j-I) Junction to lead (AC) TO-92   60  
    S(1) = 5 cm² SOT-223 MAX. 60 °C/W
Rth(j-a) Junction to ambient SMBflat-3L   75  
      TO-92   150  

1.   S = copper surface under tab.






Product Categories : Semiconductor Plastic Package > Bi Directions Thyristor (Triac)

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