| Unit Price: | USD 0.17 - 0.21 / Piece/Pieces |
|---|---|
| Payment Type: | L/C,T/T,Paypal |
| Incoterm: | FOB,CFR,CIF |
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Basic Info
Model No.: YZPST-T1650H-6I
Brand: YZPST
Place Of Origin: China
IT(RMS): 16A
VDRM: 600V
VRRM: 600V
IGT: 50mA
Tstg: -40 ~150℃
Tj: -40~125℃
ITSM: 160A
I2t: 169A2S
Additional Info
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid
Productivity: 10000000000
Transportation: Ocean,Land,Air,Others,Express
Place of Origin: CHINA
Supply Ability: 1000000000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Product Description
The heatsink can be reduced, compared to traditional triacs, according to the high performance at given junction temperatures
MAIN FEATURES
| Symbol | Value | Unit |
| IT(RMS) | 16 | A |
| VDRM VRRM | 600 | V |
| IGT | 50 | mA |
ABSOLUTE MAXIMUM RATINGS
| Parameter | Symbol | Value | Unit |
| Storage junction temperature range | Tstg | -40 ~150 | ℃ |
| Operating junction temperature range | Tj | -40~125 | ℃ |
| Repetitive peak off-state voltage (T =25℃) | VDRM | 600 | V |
| Repetitive peak reverse voltage (T =25℃) | VRRM | 600 | V |
| RMS on-state current | IT(RMS) | 16 | A |
| Non repetitive surge peak on-state current (full cycle, F=50Hz) | ITSM | 160 | A |
| I2t value for fusing (tp=10ms) | I2t | 169 | A2S |
| Critical rate of rise of on-state current (I =2×IGT) | dI/dt | 50 | A/μS |
| Peak gate current | IGM | 4 | A |
| Average gate power dissipation | PG(AV) | 1 | W |
ELECTRICAL CHARACTERISTICS (T=25℃unless otherwise specified)
| Symbol | Value | |||||
| Test Condition | Quadrant | T1635 | T1650 | Unit | ||
| IGT | Ⅰ Ⅱ Ⅲ | MAX. | 35 | 50 | mA | |
| VGT | V =12V R =33Ω | Ⅰ Ⅱ Ⅲ | MAX. | 1.3 | V | |
| VGD | VD=VDRM Tj=125℃ R=3.3KΩ | Ⅰ Ⅱ Ⅲ | MIN. | 0.2 | V | |
| IL | IG=1.2IGT | ⅠⅡ Ⅲ | MAX. | 80 | 110 | mA |
| IH | IT=100mA | MAX. | 50 | 75 | mA | |
| dV/dt | VD=2/3VDRM Gate Open Tj=125℃ | MIN. | 1000 | 1500 | V/μs | |
STATIC CHARACTERISTICS
| Symbol | Parameter | Value | Unit | |
| VTM | ITM =23A tp=380μs | Tj =25℃ | 1.55 | V |
| IDRM | VD=VDRM VR=VRRM | Tj =25℃ | 5 | μA |
| IRRM | Tj =125℃ | 5.5 | mA | |
Thermal Resistances
| Symbol | Parameter | Value | Unit |
| Rth(j-a) | junction to ambient | 60 | |
| Rth(j-c) | Junction to case(AC) | 2.1 | ℃/W |
TO-220M2 Package Mechanical Data
Product Categories : Semiconductor Plastic Package > Bi Directions Thyristor (Triac)
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