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Home > Products > Semiconductor Module Devices > Thyristor Module > Thyristor with amplifying gate SKKT106B-16E 1600V Thyristor Module
Thyristor with amplifying gate SKKT106B-16E 1600V Thyristor Module
Thyristor with amplifying gate SKKT106B-16E 1600V Thyristor Module
Thyristor with amplifying gate SKKT106B-16E 1600V Thyristor Module
Thyristor with amplifying gate SKKT106B-16E 1600V Thyristor Module
  • Thyristor with amplifying gate SKKT106B-16E 1600V Thyristor Module
  • Thyristor with amplifying gate SKKT106B-16E 1600V Thyristor Module
  • Thyristor with amplifying gate SKKT106B-16E 1600V Thyristor Module
  • Thyristor with amplifying gate SKKT106B-16E 1600V Thyristor Module

Thyristor with amplifying gate SKKT106B-16E 1600V Thyristor Module

    Unit Price: USD 12.6 - 9.6 / Piece/Pieces
    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF

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Basic Info

Model No.YZPST-SKKT106B-16E

BrandYZPST

Place Of OriginChina

VDRM1600V

VRRM1600V

VRSM1700V

IT(AV)106A

IRMS180A

ITSM2250A

I2t25KA2s

Additional Info

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity100000000

TransportationOcean,Land,Express,Others

Place of OriginCHINA

Supply Ability10000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Product Description

YZPST-SKKT106B-16E

Features

· Heat transfer through aluminium nitride ceramic isolated metal baseplate

· Precious metal pressure contacts for high reliability

· Thyristor with amplifying gate

Typical Applications

· DC motor control

· AC motor starters

· Temperature control

· Professional light dimming

YZPST-SKKT106-16E

VDRM

VRRM

VRSM

1600V

1600V

1700V

Symbol

Conditions

Values

Units

IT(AV)

 

IRMS

 

sin. 180; TC=85°C

106

 

180

 

A

ITSM

I2t

Tvj=25°C; 10ms

Tvj=25°C; 8.3…10ms

2250

25

A

KA2s

VT

IDD

IRD

Tvj=25°C; IT=300A

Tvj=130°C; VRD=VRRM; VDD=VDRM

max. 1.65

 

max. 20

V

 

mA

tgd

tgr

Tvj=25°C; IG=1A; diG/dt=1A/μs; VD=2/3VDRM

1

2

μs

(di/dt)cr

(dv/dt)cr

tq

IH

IL

Tvj=130°C

Tvj=130°C

Tvj=130°C

Tvj=25°C; typ. /max.

Tvj=25°C; RG=33Ω; typ. /max.

max. 150

max. 1000

100

250

600

A/μs

V/μs

μs

mA

mA

VGT

IGT

VGD

IGD

Tvj=25°C; d.c.

Tvj=25°C; d.c.

Tvj=130°C; d.c.

Tvj=130°C; d.c.

min.1.0

min. 35

max. 0.25

max.6

V

mA

V

mA

Rth(j-c)

Rth(c-s)

Tvj

Tstg

per thyristor /per module

per thyristor /per module

0.28

0.2

-40…+130

-40…+125

K/W

K/W

°C

°C

Visol

a.c. 50Hz; r.m.s.; 1s/1min.

3600/3000

V

Product Categories : Semiconductor Module Devices > Thyristor Module

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