| Unit Price: | USD 262 - 295 / Piece/Pieces |
|---|---|
| Payment Type: | L/C,T/T,Paypal |
| Incoterm: | FOB,CFR,CIF |
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Basic Info
Model No.: YZPST-KPX1000A-1600V
Brand: YZPST
Place Of Origin: China
VRRM: 1600V
VDRM: 1600V
VRSM: 1700V
DV/dt: 1000 V/sec
IT(AV): 1000A
ITRMSM: 1570A
Additional Info
Productivity: 1000
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 1000
Certificate: ISO9001-2008,ROHS
HS Code: 85413000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Product Description
ANTI-PARALLEL SCR module ASSEMBLY-KPX1000A-1600V
Features:
all diffused design
high current capabilities
high surge current capabilities
high rates voltages
high dv/dt
low gate current dynamic gate
low thermal impedance
compact size and small weight
APPLICATION
High Power Drives
DC Motor Control
High Voltage Power Supplies
Blocking - Off State
| VRRM (1) | VDRM (1) | VRSM (1) |
| 1600 | 1600 | 1700 |
VRRM = Repetitive peak reverse voltage
VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage (2)
| Repetitive peak reverse leakage and off state leakage | IRRM / IDRM | 10 mA 100 mA (3) |
| Critical rate of voltage rise | dV/dt (4) | 1000 V/msec |
Conducting - on state
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Max. average value of on-state current | IT(AV) |
| 1000 |
| A | Sinewave,180o conduction,Tc=95oC |
| RConducting - on state MS value of on-state current | ITRMSM |
| 1570 |
| A | Nominal value |
| Peak one cPSTCle surge (non repetitive) current |
ITSM |
| -
30 |
| kA
kA | 8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
| I square t | I2t |
| 4500x103 |
| A2s | 10 msec |
| Treshold voltage | VT(T0) |
| 0.928 |
| V |
|
| Slope resistance | rT |
| 0.189 |
| mΩ |
|
| Latching current | IL |
| 2000 |
| mA | VD = 12 V; RL= 12 ohms |
| Holding current | IH |
| 500 |
| mA | VD = 12 V; I = 2.5 A |
| Peak on-state voltage | VTM |
| 1.75 |
| V | ITM =3000 A(MAX); Tj =1 25 oC |
| Critical rate of rise of on-state current (5, 6) | di/dt |
| 200 |
| A/ms | Switching from VDRM £ 1000 V, non-repetitive |
| Critical rate of rise of on-state current (6) | di/dt |
| - |
| A/ms | Switching from VDRM £ 1000 V |
Gating
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Peak gate power dissipation | PGM |
| 30 |
| W |
|
| Average gate power dissipation | PG(AV) |
| 4 |
| W |
|
| Peak gate current | IGM |
| - |
| A |
|
| Gate current required to trigger all units | IGT |
| 300 |
| mA | VD = 10 V;IT=3A;Tj = +25 oC
|
| Gate voltage required to trigger all units
| VGT |
| 3 |
| V
| VD = 10 V;IT=3A;Tj = +25 oC
|
| Peak negative voltage | VRGM |
| 5 |
| V |
|
Product Categories : Semiconductor Module Devices > Thyristor Module
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