| Unit Price: | USD 10.5 - 7.5 / Piece/Pieces |
|---|---|
| Payment Type: | L/C,T/T,Paypal |
| Incoterm: | FOB,CFR,CIF |
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Basic Info
Model No.: YZPST-SK70KQ08
Brand: YZPST
Application: High Frequency, Current Mirror
Supply Type: Original Manufacturer, Odm, Agency, Other
Reference Materials: Datasheet, Photo, Other
Package Type: Surface Mount, Throught Hole
Installation Method: Through Hole, Surface Mount
FET Function: Silicon Carbide (Sic), Standard, Super Junction, Ganfet (Gallium Nitride), Not Applicable
Configuration: Single, T-Type, Single Switch, Not Applicable
VRRM/VDRM Tvj=125℃: 800V
VRSM/VDSM Tvj=125℃: 900V
IRRM/IDRM Tvj=125℃: 5mA
IT(AV) TC=85℃: 55A
IT(RMS) TC=85℃, Sin180°: 80A
ITSM 10ms, Tj=25℃: 1100A
I2t: 6050A2S
VTM: 1.7V
Additional Info
Productivity: 100000
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 10000
Certificate: ISO9001-2008,ROHS
HS Code: 85413000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Product Description
RoHS Compliant
PRODUCT FEATURES
Compact Design
One screw mounting
Heat transfer and isolation through DBC
Glass passivation thyristor chips
Low Leakage Current
APPLICATIONS
Soft starters
Temperature control
Light control
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
| Symbol | Parameter | Test Conditions | Values | Unit |
| VRRM | Maximum Repetitive Reverse Voltage | Tvj=125℃ | 800 | V |
| VDRM | Maximum repetitive peak off-state voltage | |||
| VRSM | Non-Repetitive Reverse Voltage | Tvj=125℃ | V | |
| VDSM | Non-repetitive peak off-state voltage | 900 | ||
| IRRM | Maximum Repetitive Reverse Current | Tvj=125℃ | 5 | mA |
| IDRM | Maximum repetitive peak off-state Current | |||
| IT(AV) | Mean On-state Current | TC=85℃ | 55 | |
| IT(RMS) | RMS Current | TC=85℃, sin180° | 80 | A |
| ITSM | Non Repetitive Surge Peak On-state Current | 10ms, Tj=25℃ | 1100 | |
| I2t | For Fusing | 10ms, Tj=25℃ | 6050 | A2S |
| VTM | Peak on-state voltage | ITM=150A | 1.7 | V |
| dv/dt | critical rate of rise of off-state voltage | VD =2/3VDRM Gate Open Tj=125℃ | 1000 | V/us |
| IGT | gate trigger current max. | 80 | mA | |
| VGT | gate trigger voltage max. | 1.5 | V | |
| IH | gate trigger current | 200 | mA | |
| IL | latching current | 500 | mA | |
| Viso | AC 50Hz RMS 1min | 2500 | V | |
| TJ | Junction Temperature | -40 to +125 | ℃ | |
| TSTG | Storage Temperature Range | -40 to +125 | ||
| RthJC | Junction to Case Thermal Resistance(Per thyristor chip ) | 0.7 | ℃ /W | |
| Torque | mounting force, Module to Sink | 2.5 | Nm | |
| Tsolder | Teminals,10s | 260 | ℃ | |
Outlines
Product Categories : Semiconductor Module Devices > Thyristor Module
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