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Home > Products > Semiconductor Module Devices > Thyristor Module > Low Leakage Current 120A 1600V Thyristor Module
Low Leakage Current 120A 1600V Thyristor Module
Low Leakage Current 120A 1600V Thyristor Module
Low Leakage Current 120A 1600V Thyristor Module
Low Leakage Current 120A 1600V Thyristor Module
Low Leakage Current 120A 1600V Thyristor Module
  • Low Leakage Current 120A 1600V Thyristor Module
  • Low Leakage Current 120A 1600V Thyristor Module
  • Low Leakage Current 120A 1600V Thyristor Module
  • Low Leakage Current 120A 1600V Thyristor Module
  • Low Leakage Current 120A 1600V Thyristor Module

Low Leakage Current 120A 1600V Thyristor Module

    Unit Price: USD 15.2 - 19.2 / Piece/Pieces
    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF

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Basic Info

Model No.YZPST-SK120KQ16

BrandYZPST

Place Of OriginChina

VRRM1600V

VDRM1600V, 1700V

VDSM1700V

IRRM5mA

IT(AV)90A

IT(RMS)145A

ITSM2100A

Additional Info

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity1000000

TransportationOcean,Land,Others

Place of OriginCHINA

Supply Ability1000000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Product Description

120A   1600V   Thyristor  Module
RoHS  Compliant
YZPST-SK120KQ16
PRODUCT FEATURES
      Compact Design
      One screw mounting
      Heat transfer and isolation through DBC
      Glass passivation thyristor chips
      Low Leakage Current
APPLICATIONS
      Soft starters
      Temperature control

      Light control

YZPST-SK120KQ16-1

ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)

Symbol Parameter Test Conditions Values Unit
VRRM Maximum Repetitive Reverse Voltage Tvj=125 1600 V
VDRM Maximum repetitive peak off-state voltage
VRSM Non-Repetitive Reverse Voltage Tvj=125 1700 V
VDSM Non-repetitive peak off-state voltage
IRRM Maximum Repetitive Reverse Current Tvj=125 5 mA
IDRM Maximum repetitive peak off-state Current
IT(AV) Mean On-state Current TC=85 90
IT(RMS) RMS Current TC=85, sin180 145 A
ITSM Non Repetitive Surge Peak On-state Current 10ms, Tj=25 2100
I2t For Fusing 10ms, Tj=25 20000 A2S
VTM Peak on-state voltage ITM=300A 1.8 V
dv/dt critical rate of rise of off-state voltage VD =2/3VDRM   Gate Open Tj=125 1000 V/us
IGT gate trigger current     max. 80 mA
VGT gate trigger voltage     max. 1.5 V
IH gate trigger current 250 mA
IL latching current 300 mA
Viso AC   50Hz   RMS    1min 2500 V
TJ Junction Temperature -40 to +125
TSTG Storage Temperature Range -40 to +125
RthJC Junction to Case Thermal Resistance(Per thyristor chip ) 0.35  /W
Torque mounting force, Module to Sink 2 Nm
Tsolder Teminals,10s 260

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Product Categories : Semiconductor Module Devices > Thyristor Module

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