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YANGZHOU POSITIONING TECH CO., LTD.
Home > Products > Semiconductor Module Devices > Thyristor Module > 1000V Power MOSFET Module N-Channel Enhancement Mode
1000V Power MOSFET Module N-Channel Enhancement Mode
1000V Power MOSFET Module N-Channel Enhancement Mode
1000V Power MOSFET Module N-Channel Enhancement Mode
1000V Power MOSFET Module N-Channel Enhancement Mode
1000V Power MOSFET Module N-Channel Enhancement Mode
  • 1000V Power MOSFET Module N-Channel Enhancement Mode
  • 1000V Power MOSFET Module N-Channel Enhancement Mode
  • 1000V Power MOSFET Module N-Channel Enhancement Mode
  • 1000V Power MOSFET Module N-Channel Enhancement Mode
  • 1000V Power MOSFET Module N-Channel Enhancement Mode

1000V Power MOSFET Module N-Channel Enhancement Mode

    Unit Price: USD 21.5 - 31.5 / Piece/Pieces
    Payment Type: T/T,L/C,Paypal
    Incoterm: FOB,CFR,CIF

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Basic Info

Model No.YZPST-MS38N100

BrandYZPST

Place Of OriginChina

VDSS1000V

ID2538A

RDS(on)≤ 210mΩ

Trr≤ 300ns

VDGR1000V

VGSS±30V

VGSM±40V

IDM120A

TJ-55 ... +150℃

TJM150℃

Additional Info

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity10000

TransportationOcean,Land

Supply Ability1000000

PortSHANGHAI

Payment TypeT/T,L/C,Paypal

IncotermFOB,CFR,CIF

Product Description

Power MOSFET

N-Channel Enhancement Mode

Fast Intrinsic Rectifier

VDSS = 1000V

ID25 = 38A

RDS(on) 210mΩ

trr 300ns

Features

 International Standard Package

 Low Intrinsic Gate Resistance

 miniBLOC with Aluminum Nitride Isolation

 Low Package Inductance

 Fast Intrinsic Rectifier

 Low RDS(on)  and QG

Advantages

 High Power Density

 Easy to Mount

 Space Savings

Applications

 DC-DC Converters

 Battery Chargers

 Switch-Mode and Resonant-Mode Power Supplies

 AC Motor Control

 High Speed Power Switching Appliccation

YZPST-MS38N100 Power MOSFET


Symbol Test Conditions Maximum Ratings
VDSS TJ      = 25 to 150                                                      1000 V
                              
VDGR T    = 25 to 150, RGS  = 1MΩ 1000 V
VGSS Continuous
30
V
VGSM Transient 40 V
ID25 TC   = 25 38 A
IDM T  = 25, Pulse Width Limited by TJM 120 A
I A TC = 25 19 A
EAS TC = 25 2 J
dv/dt I    IDM , VDD  VDSS , T 150 20 V/ns
PD   = 25 1000 W
TJ -55 ... +150
TJM 150
TSTG -55 ... +150
VISOL 50/60 Hz, RMS, t = 1minute 2500 V~
I ISOL £ 1mA, t = 1s 3000 V~
MD Mounting Torque for Base Plate 1.5/13 1.3/11.5 Nm/lb.in Nm/Ib.in
Terminal Connection Torque
Weight 30 g


SOT-227B (IXFN) Outline

 SOT-227B (IXFN) Outline


Product Categories : Semiconductor Module Devices > Thyristor Module

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