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YANGZHOU POSITIONING TECH CO., LTD.
Home > Products > Semiconductor Module Devices > Thyristor Module > TT320N16SOF Dual Thyristor Modules Thyristor with amplifying gate
TT320N16SOF Dual Thyristor Modules Thyristor with amplifying gate
TT320N16SOF Dual Thyristor Modules Thyristor with amplifying gate
  • TT320N16SOF Dual Thyristor Modules Thyristor with amplifying gate
  • TT320N16SOF Dual Thyristor Modules Thyristor with amplifying gate

TT320N16SOF Dual Thyristor Modules Thyristor with amplifying gate

    Unit Price: USD 43 - 55 / Piece/Pieces
    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF

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Basic Info

Model No.YZPST-TT320N16SOF

BrandYZPST

IT(AV)M320A

ITRMSM520A

ITSM8.2kA

I2t335kA2S

VDRM/VRRM1600V

Additional Info

Productivity100000

TransportationOcean,Air

Place of OriginChina

CertificateISO9001-2008,ROHS

HS Code85413000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Product Description

Dual Thyristor Modules
TYPE: YZPST-TT320N16SOF
Features
· Heat transfer through aluminium nitride ceramic isolated metal baseplate
· Precious metal pressure contacts for high reliability
· Thyristor with amplifying gate
Typical Applications
· DC motor control
· Temperature control

· Professional light dimming

Maximum Ratings

Symbol

Condition

Ratings

Unit

IT(AV)M

Single phase half wave sin 180° conduction ;TC=85°C

320

A

ITRMSM

Single phase half wave sin 180° conduction

520

A

ITSM

Tj= Tj MAX

8.2

kA

I2t

Tj= Tj MAX

335

kA2S

VDRM/VRRM

Tj= Tj MAX

1600

V

di/dt

non-repetitive

100

A/us

Viso

A.C. 1minute/1S

3000/3600

V

Tj

 

-40   ~    + 130

°C

Tstg

 

-40   ~    + 130

°C

W

About

410

g

Electrical Characteristics

Symbol

Condition

Ratings

Unit

IDRM /IRRM

AtVDRM Single phase half wave Tj= Tj MAX

60

A

VTM

On-State Current 750A Tj=130°C

1.47

V

VT(TO)

Tj= Tj MAX

0.77

V

T

Tj= Tj MAX

0.58

Ω

RK1G1

 

-

Ω

RK2G2

 

-

Ω

tgd

Tj=25°C;VD=0.4VDRM ; ITM=ITAV

2

us

tq

dvD/dt=50V/us; Tj= Tj MAX; ITM=ITAV

200

us

IGT/VGT

Tj=25°C IT=1A VD=6V

150 / 2.0

mA/V

VGD

VD=67%VDRM

0.25

V

DV/DT

VD=67%VDRM

1000

V/us

IH

Tj=25°C

150

A

IL

Tj=25°C

380

A

Rth(j-c)

Thermal resistance Junction to case; per module

0.055

K/W

Rth(c-h)

Thermal resistance case to heatsink; per module

0.0275

K/W

Outline Drawing
YZPST-TT320N16SOF-1

Product Categories : Semiconductor Module Devices > Thyristor Module

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