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Home > Products > Semiconductor Stud Devices > Standard Recovery Stud Diode > 1600V High impact current recovery Stud diode
1600V High impact current recovery Stud diode
  • 1600V High impact current recovery Stud diode

1600V High impact current recovery Stud diode

    Unit Price: USD 0.95 - 1.35 / Piece/Pieces
    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF
    Min. Order: 1 Piece/Pieces
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Basic Info

Model No.YZPST-SM40HF160

BrandYZPST

Additional Info

Packaging1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity1000

TransportationOcean,Air

Place of OriginChina

Supply Ability10000

CertificateISO9001-2015,ROHS

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Product Description


STANDARD RECOVERY DIODES Stud Version


YZPST-SM40HF160

STANDARD RECOVERY DIODES

Features:

  High current carrying capability  

  High voltage ratings up to 2000V

  High surge current capabilities    

  Stud cathode and stud anode version

Typical Applications

  Converters   

  High power drives  

  Power supplies 

  Machine tool controls 

Medium traction applications  Power supplies

Parameters

SM40HF..

Units

 

 

40

 

A

 

 

@ TC

 

90

°C

 

IF(RMS)

 

62

 

A

 

@ 50Hz

 

570

 

A

 

 

@ 60Hz

 

590

 

A

 

 

@ 50Hz

 

1600

A2S

 

 

@ 60Hz

 

1450

A2S

 

VRRM                                                                 range

 

400 to 2000

 

V

 

TJ

 

-40 to 160

 

°C



ELECTRICAL SPECIFICATIONS


Voltage Ratings


 

Type number

Voltage

 

Code

RRM, maximum repetitive peakreverse voltage

V

RSM , maximumnon- repetitive peakrev. voltage

V

RRM max.

@ T = T Jmax. mA

 

 

 

 

 

SM40HF..

40

400

500

 

 

 

 

 

30

80

800

900

120

1200

1300

140

1400

1500

160

1600

1700

200

2000

2100

Forward Conduction

Parameter

SM40HF..

Units

Conditions

F(AV)                   Max. average forwardcurrent

 

@ Case temperature

40

A

180° conduction, half sine wave

90

°C

IF(RMS)              Max. RMS forwardcurrent

62

A

DC @ TC = 75°C (04 to 20), TC = 36°C(25 to 32)

FSM,             Maximum peak, one-cycleforward, non-repetitive surgecurrent

570

A

t = 10ms

No voltage reapplied

 

 

 

 

 

Sinusoidal    half wave,

Initial T = Tmax.

590

t = 8.3ms

480

t = 10ms

100% VRRM

 

reapplied

500

t = 8.3ms

t               Maximum I t for fusing

1600

s

t = 10ms

No voltage reapplied

1450

t = 8.3ms

1150

t = 10ms

100% VRRM

 

reapplied

1050

t = 8.3ms

I2t              Maximum I2t for fusing

16000

A2s

t = 0.1 to 10ms, no voltage reapplied

VF(TO)       Low level value of thresholdvoltage

0.65

V

T= 200°C

rf                  Max. value of forward sloperesistance

4.30

mΩ

VFM                     Max. forward voltagedrop

1.30

V

(IFM π x IF(AV) (125A peak), T= 25°C

hermal and Mechanical Specifications

Parameter

SM40HF..

Units

Conditions

T J

- 40 to 150

°C

 

Tstg

- 40 to 150

 

R thJC    Thermal Impedance, max.

0.95

K/W

DC operation

RthCS     Max. thermal resistance, caseto

 

heatsink

0.25

 

Mounting surface, smooth, flat andgreased

T              Max. allowed mounting torque+0 -20%

3.5

Nm

Not lubricated threads

2.3

Lubricated threads

wt            Approximate weight

17

g

 

Case style

DO-203AB (DO-5)

See Outline Table


Ordering Information Table

Device Code

 

 

SM

 

40

 

HF

 

R

 

100

 

M

 

1

 

2

 

3

 

4         5          6

 

 

1      -     Corporation code

2      -     Average Forward Current:   IFAV

3      -     Diode

4      -     None = Stud Normal Polarity (Cathode to Stud)

    -     R     = Stud Reverse Polarity (Anode to Stud)

5            Voltage code: Code x 100 = VRRM

6            None = Stud base DO-203AB (DO-5) 1/4" 28UNF-2A M     = Stud base DO-203AB (DO-5) M6X1


Product Categories : Semiconductor Stud Devices > Standard Recovery Stud Diode

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