Communicate with Supplier? Supplier
John chang Mr. John chang
What can I do for you?
Chat Now Contact Supplier
YANGZHOU POSITIONING TECH CO., LTD.
Home > Products > Semiconductor Plastic Package > Silicon Transistor > TO-247 DC-AC converter Complementary NPN transistors
TO-247 DC-AC converter Complementary NPN transistors
TO-247 DC-AC converter Complementary NPN transistors
  • TO-247 DC-AC converter Complementary NPN transistors
  • TO-247 DC-AC converter Complementary NPN transistors

TO-247 DC-AC converter Complementary NPN transistors

    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF
Contact Now

Basic Info

Model No.YZPST-2SDW100

BrandYZPST

CertificationCE

Encapsulation StructurePlastic Sealed Transistor

Additional Info

Productivity1000

TransportationOcean,Air

Place of OriginChina

Supply Ability10000

CertificateISO9001-2008,ROHS

HS Code85413000

PortShanghai

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Product Description

Complementary power Darlington transistors

YZPST-2SDW100

Features


■    Complementary NPN - PNP transistors

■    Monolithic Darlington configuration



Applications


■    Audio power amplifier

■    DC-AC converter

■    Low voltage DC motor drive

■    General purpose switching applications


Description


The devices are manufactured in planar technology with [base island" layout and monolithic Darlington configuration.





Table 1.       Device summary

Order code

Marking

Package

Packaging

2SDW100

2SDW100

TO-247

Tube

2SDW200

2SDW200


1           Absolute maximun ratings

Table 2.       Absolute maximum ratings

 

Symbol

 

Parameter

Value

 

Unit

NPN

2SDW100

PNP

2SDW200

VCBO

Collector-emitter voltage (IE = 0)

80

V

VCEO

Collector-emitter voltage (IB = 0)

80

V

IC

Collector current

25

A

ICM

Collector peak current (tP < 5 ms)

40

A

IB

Base current

6

A

IBM

Base peak current (tP < 5 ms)

10

A

PTOT

Total dissipation at Tc 25 °C

130

W

TSTG

Storage temperature

-65 to 150

°C

TJ

Max. operating junction temperature

150

°C


Note:           For PNP type voltage and current values are negative


Table 3.       Thermal data

Symbol

Parameter

Value

Unit

RthJC

Thermal resistance junction-case max

0.96

°C/W


2           Electrical characteristics

Tcase = 25 °C; unless otherwise specified.

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

 

ICBO

Collector cut-off current

(IE = 0)

 

VCE = 80 V

 

 

 

0.5

 

mA

 

ICEV

Collector cut-off current

(VBE = - 0.3 V)

 

VCE = 80 V

 

 

 

0.1

 

mA

 

ICEO

Collector cut-off current

(IB = 0)

 

VCE = 60 V

 

 

 

0.5

 

mA

 

IEBO

Emitter cut-off current

(IC = 0)

 

VEB = 5 V

 

 

 

2

 

mA

VCEO(sus) (1)

Collector-emitter sustaining voltage (IB = 0)

 

IC = 50 mA

 

80

 

 

 

V

 

VCE(sat)(1)

 

Collector-emitter saturation voltage

IC = 5 A      IB = 20 mA IC = 10 A    IB = 40 mA IC = 20 A    IB = 80 mA

 

 

1.2

1.75

3.5

V V V

 

VBE(sat)(1)

Base-emitter saturation voltage

 

C                   B

 

 

 

3.3

 

V

(1)

Base-emitter voltage

I  = 10 A  V     = 3 V

1

 

3

V

 

hFE(1)

 

DC current gain

IC = 5 A      VCE = 3 V IC = 10 A    VCE = 3 V IC = 20 A    VCE = 3 V

600

500

300

 

15000

12000

6000

 

VF(1)

Diode forward voltage

IF = 10 A

 

TBD

 

V

 

Is/b

Second breakdown current

 

VCE = 25 V   t = 500 ms

 

 

TBD

 

 

A



Table 4.       Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

 

ICBO

Collector cut-off current

(IE = 0)

 

VCE = 80 V

 

 

 

0.5

 

mA

 

ICEV

Collector cut-off current

(VBE = - 0.3 V)

 

VCE = 80 V

 

 

 

0.1

 

mA

 

ICEO

Collector cut-off current

(IB = 0)

 

VCE = 60 V

 

 

 

0.5

 

mA

 

IEBO

Emitter cut-off current

(IC = 0)

 

VEB = 5 V

 

 

 

2

 

mA

VCEO(sus) (1)

Collector-emitter sustaining voltage (IB = 0)

 

IC = 50 mA

 

80

 

 

 

V

 

VCE(sat)(1)

 

Collector-emitter saturation voltage

IC = 5 A      IB = 20 mA IC = 10 A    IB = 40 mA IC = 20 A    IB = 80 mA

 

 

1.2

1.75

3.5

V V V

 

VBE(sat)(1)

Base-emitter saturation voltage

 

C                   B

 

 

 

3.3

 

V

(1)

Base-emitter voltage

I  = 10 A  V     = 3 V

1

 

3

V

 

hFE(1)

 

DC current gain

IC = 5 A      VCE = 3 V IC = 10 A    VCE = 3 V IC = 20 A    VCE = 3 V

600

500

300

 

15000

12000

6000

 

VF(1)

Diode forward voltage

IF = 10 A

 

TBD

 

V

 

Is/b

Second breakdown current

 

VCE = 25 V   t = 500 ms

 

 

TBD

 

 

A

1.   Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %.

For PNP type voltage and current values are negative.



TO-247 Mechanical data

 

Dim.

mm.

Min.

Typ

Max.

A

4.85

 

5.15

A1

2.20

 

2.60

b

1.0

 

1.40

b1

2.0

 

2.40

b2

3.0

 

3.40

c

0.40

 

0.80

D

19.85

 

20.15

E

15.45

 

15.75

e

 

5.45

 

L

14.20

 

14.80

L1

3.70

 

4.30

L2

 

18.50

 

øP

3.55

 

3.65

øR

4.50

 

5.50

S

 

5.50

 

transistors 2SDW100 1transistors 2SDW100



Product Categories : Semiconductor Plastic Package > Silicon Transistor

Email to this supplier
  • Mr. John chang
  • Your message must be between 20-8000 characters

Home > Products > Semiconductor Plastic Package > Silicon Transistor > TO-247 DC-AC converter Complementary NPN transistors
Send Inquiry
*
*

Home

Product

Whatsapp

About Us

Inquiry

苏ICP备05018286号-1
We will contact you immediately

Fill in more information so that we can get in touch with you faster

Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.

Send