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Home > Products > Semiconductor Plastic Package > Silicon Transistor > Power mosfet smd 110v STC2326
Power mosfet smd 110v STC2326
Power mosfet smd 110v STC2326
  • Power mosfet smd 110v STC2326
  • Power mosfet smd 110v STC2326

Power mosfet smd 110v STC2326

    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF
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Basic Info

Model No.YZPST-STC2326

BrandYZPST

Additional Info

Productivity1000

TransportationOcean,Air

Place of OriginChina

Supply Ability10000

CertificateISO9001-2008,ROHS

HS Code85413000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Product Description

BTA30 Series Triacs    

YZPST-STC2326

DESCRIPTION 


The STC2326 is the N-Channel logic enhancement mode power field effect transistor which is produced using  super  high  cell  density  DMOS  trench technology. The STC2326 has been designed specifically to improve the overall efficiency of DC/ DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

APPLICATIONS


 Powered System

 DC/DC Converter

 Load Switch


FEATURES 

 110V/3A,RDS(ON)=310mΩ@VGS=10V

 High density cell design for extremely low RDS (ON)

 Exceptional on-resistance and maximum DC current capability

 SOT-23-6L package design


PIN CONFIGURATION(SOT-23-6L)

mosfet STC2326 (1)

Pin

Symbol

Description

1

D

Drain

2

D

Drain

3

G

Gate

4

S

Source

5

D

Drain

6

D

Drain

ORDERING INFORMATION

Part Number

Package

Part   Marking

SPN2326S26RGB

SOT-23-6L

26YW

 

ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)

Parameter

Symbol

Typical

Unit

 

Drain-Source Voltage

 

VDSS

 

110

 

V

Gate Source Voltage

 

VGSS

 

±20

 

V

 

Continuous Drain Current(TJ=150℃)

TA=25℃

 

ID

3.0

 

A

TA=70℃

2.0

 

Pulsed Drain Current

 

IDM

 

10

 

A

 

Power Dissipation

TA=25℃

 

PD

2.0

 

W

TA=70℃

1.3

 

Operating Junction Temperature

 

TJ

 

-55/150

Storage Temperature Range

TSTG

-55/150

Thermal Resistance-Junction to Ambient

RθJA

62.5

/W

 

Parameter

 

Symbol

 

Conditions

 

Min.

 

Typ

 

Max.

 

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS=0V,ID=250uA

110

 

 

V

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=250uA

1

2.0

2.5

Gate Leakage Current

IGSS

VDS=0V,VGS=±20V

 

 

±100

nA

Zero Gate Voltage Drain Current

IDSS

VDS=80V,VGS=0V

 

 

1

uA

VDS=80V,VGS=0V TJ=125

 

 

 

5

On-State Drain Current

ID(on)

VDS5V,VGS =10V

3.0

 

 

A

Drain-Source On-Resistance

RDS(on)

VGS= 10V,ID=3A

 

0.26

0.31

Ω

Forward Transconductance

gfs

VDS=10V,ID=3A

 

2.4

 

S

Diode Forward Voltage

VSD

IS=1A,VGS =0V

 

 

1.2

V

Dynamic

Total Gate Charge

Qg

VDS=80V,VGS=10V ID= 5A

 

9

13

 

nC

Gate-Source Charge

Qgs

 

2

 

Gate-Drain Charge

Qgd

 

1.4

 

Input Capacitance

Ciss

VDS=25,VGS=0V

f=1MHz

 

508

 

 

pF

Output Capacitance

Coss

 

29

 

Reverse Transfer Capacitance

Crss

 

16.5

 

Turn-On Time

td(on)

 

VDD=50V,RL=10Ω

ID=3A,VGEN=10V RG=3.3Ω

 

2

 

 

nS

tr

 

21.5

 

 

Turn-Off Time

td(off)

 

11.2

 

tf

 

18.8

 

mosfet STC2326 (2)mosfet STC2326 (3)


Product Categories : Semiconductor Plastic Package > Silicon Transistor

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