| Payment Type: | L/C,T/T,Paypal |
|---|---|
| Incoterm: | FOB,CFR,CIF |
Basic Info
Model No.: YZPST-DCR1020SF65-1
Brand: YZPST
Additional Info
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging
Productivity: 100
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 1000
Certificate: ISO9000
HS Code: 85413000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Product Description
High Power Thyristor
YZPST-DCR1020SF65-1
application of thyristors dc motor thyristor control Pressure Assembled Device thyristorAll ratings are specified for Tj=25 oC unless otherwise stated.
(1) All voltage ratings are specified for an applied 50Hz/60zHz sinusoidal waveform over the temperature range -40 to +125 oC.
(2) 10 msec. max. pulse width
(3) Maximum value for Tj = 125 oC.
(4) Minimum value for linear and exponential waveshape to 80% rated VDRM. Gate open. Tj = 125 oC.
(5) Non-repetitive value.
(6) The value of di/dt is established in accordance with EIA/NIMA Standard RS-397, Section 5-2-2-6. The value defined would be in addi-
tion to that obtained from a snubber circuit, comprising a 0.2 F capacitor and 20 ohms resistance in parallel with the thristor under test.
Features: . All Diffused Structure . Center Amplifying Gate Configuration . Blocking capabilty up to 4200 volts
. Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Average value of on-state current |
IT(AV) |
|
640 |
|
A | Sinewave,180o conduction,T =60oC c |
| RMS value of on-state current | ITRMS |
| 1005 |
| A | Nominal value |
|
Peak one cPSTCle surge (non repetitive) current |
ITSM |
|
-
8.5 |
|
KA KA | 8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, T = 125 j oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, T = 125 j oC |
| I square t | I2t |
| 0.36x106 |
| A2s | 8.3 msec and 10.0 msec |
| Latching current | IL |
| 600 |
| mA | VD = 24 V; RL= 12 ohms |
| Holding current | IH |
| 200 |
| mA | VD = 24 V; I = 2.5 A |
|
Peak on-state voltage |
VTM |
|
3.6 |
|
V | ITM = 1800 A; Duty cPSTCle 0.01%; T = 25 oC j |
| Critical rate of rise of on-state current (5, 6) |
di/dt |
|
- |
|
A/ s | Switching from VDRM 1000 V, non-repetitive |
| Critical rate of rise of on-state current (6) |
di/dt |
|
100 |
|
A/ s |
Switching from VDRM 1000 V |
ELECTRICAL CHARACTERISTICS AND RATINGS
|
Gating
Parameter Symbol Min. Max. Typ. Units Conditions Peak gate power dissipation PGM 150 W tp = 40 us Average gate power dissipation PG(AV) 5 W Peak gate current IGM - A Gate current required to trigger all units IGT - 300 - mA mA mA V = 6 V;R = 3 ohms;T = -40 oC D L j V = 6 V;R = 3 ohms;T = +25 oC D L j V = 6 V;R = 3 ohms;T = +125oC D L j Gate voltage required to trigger all units V - 3.0 - V V V V = 6 V;R = 3 ohms;T = -40 oC D L j V = 6 V;R = 3 ohms;T = 0-125oC D L j VD = Rated VDRM; RL = 1000 ohms; T = + 125 oC j Peak negative voltage VGRM 5 V
Dynamic
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
|
Delay time |
td |
|
- |
0.5 |
s | ITM = 50 A; VD = Rated VDRM Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 s; tp = 20 s |
|
Turn-off time (with VR = -50 V) |
tq |
|
- |
600 |
s | ITM = 1000 A; di/dt = 25 A/ s; VR -50 V; Re-applied dV/dt = 20 V/ s linear to 80% VDRM; VG = 0; T = 125 oC; Duty cPSTCle j 0.01% |
|
Reverse recovery charge |
Qrr |
|
* |
|
C | ITM = 1000 A; di/dt = 25 A/ s; VR -50 V |
* For guaranteed max. value, contact factory.
THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Operating temperature | Tj | -40 | +125 |
| oC |
|
|
Storage temperature |
Tstg |
-40 |
+125 |
|
oC |
|
|
Thermal resistance - junction to case |
R (j-c) |
| 0.022 0.052 |
| o C/W | Double sided cooled Single sided cooled |
|
Thermal resistamce - case to sink |
R (c-s) |
| 0.004 0.008 |
| o C/W | Double sided cooled * Single sided cooled * |
|
Thermal resistamce - junction to sink |
R (j-s) |
| - - |
| o C/W | Double sided cooled * Single sided cooled * |
| Mounting force | P | 18 | 22 |
| kN |
|
| Weight | W |
|
| - | g |
|
* Mounting surfaces smooth, flat and greased
CASE OUTLINE AND DIMENSIONS
Product Categories : Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor
Hot Products
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Fill in more information so that we can get in touch with you faster
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Contact Now
