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Basic Info
Model No.: YZPST-KP1500A6500V
Brand: YZPST
Additional Info
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging
Productivity: 100
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 500
Certificate: ISO9001-2008,ROHS
HS Code: 85413000
Port: Shanghai
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Product Description
Power Control Thyristors
YZPST-KP1500A6500V
Features: Spoke Amplifying Gate Configuration. High dV/dt Capability. All Diffused Structure. Pressure Assembled Device.
Conducting - on state
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Average value of on-state current | IT(AV) |
| 1500 | | A | Sinewave,180o conduction,Tc=70oC |
| RMS value of on-state current | ITRMS |
| 2800 | | A | Nominal value |
| Peak one cpstcle surge (non repetitive) current |
ITSM |
| 30000 27000 |
| A A | 8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
| I square t | I2t |
| 10x106 |
| A2s | 8.3 msec and 10.0 msec |
| Latching current | IL |
| 1500 |
| mA | VD = 24 V; RL= 12 ohms |
| Holding current | IH |
| 250 |
| mA | VD = 24 V; I = 2.5 A |
| Peak on-state voltage | VTM | | 2.20 | | V | ITM = 3000 A |
| Critical rate of rise of on-state current (5) | di/dt | | 300 | | A/ms | Switching from VDRM£ 800 V, non-repetitive |
| Critical rate of rise of on-state current | di/dt | | 100 | | A/ms | Switching from VDRM£ 800 V |
Gating
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Peak gate power dissipation | PGM |
| 200 | | W | tp = 40 us |
| Average gate power dissipation | PG(AV) |
| 5 |
| W | |
| Peak gate current | IGM |
| 20 |
| A | |
| Gate current | IGT |
| 300 |
| mA | |
| Gate voltage | VGT | 0.30 | 3.5 |
| V | |
Dynamic
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Delay time | td |
| | | ms | |
| Turn-off time (with VR = -50 V) | tq |
| |
| ms | |
THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Operating temperature | Tj | -40 | +125 | | oC | |
| Storage temperature | Tstg | -40 | +150 |
| oC | |
| Thermal resistance - junction to case | RQ (j-c) | | 0.012 |
| oC/W | Double sided cooled Single sided cooled |
| Thermal resistamce - case to sink | RQ (c-s) | | 0.002 |
| oC/W | Double sided cooled * Single sided cooled * |
| Mounting force | P | 8000 | 10000 |
| lb. kN | |
| Weight | W | | | | Lb. Kg. | |
* Mounting surfaces smooth, flat and greased
Note : for case outline and dimensions, see case outline drawing
Product Categories : Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor
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