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Home > Products > Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor > Phase Control thyristor 400a Specification
Phase Control thyristor 400a Specification
  • Phase Control thyristor 400a Specification

Phase Control thyristor 400a Specification

    Payment Type: L/C,T/T,D/P
    Incoterm: FOB,CFR,FCA

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Basic Info

Model No.YZPST-KP400A1800V

BrandYZPST

Additional Info

Productivity100

TransportationOcean,Air

Place of OriginChina

Supply Ability1000

CertificateISO9001-2008,ROHS

HS Code85413000

PortShanghai

Payment TypeL/C,T/T,D/P

IncotermFOB,CFR,FCA

Product Description

Phase Control Thyristors

YZPST-KP400A1800V 

Phase Control Thyristors is



Phase trigger circuit is actually a kind of ac trigger circuit. The method of this circuit is to use RC circuit to control the phase of trigger signal.


Thyristor

Ratings

Symbol

Definition

Conditions

 

min.

typ.

max.

Unit

V EQ \F(RSM,DSM)

max. non-repetitive reverse/forward blocking voltage

TJ = 25°C

 

 

1900

V

V EQ \F(RRM,DRM)

max. repetitive reverse/forward blocking voltage

TJ = 25°C

 

 

1800

V

VT

On-state voltage

IT=1100 A

TJ = 25°C

 

 

1.85

V

IT(AV)

average forward current

TC=25°C

 

 

 

400

A

IT(RMS)

RMS forward current

180° sine

 

 

 

530

A

RthJC

thermal resistance junction to case

 

 

 

 

 

K/W

RthCH

thermal resistance case to heatsink

 

 

 

 

 

K/W

RthJK

thermal resistance junction to heatsink

 

 

 

 

0.048

K/W

ITSM

max. forward surge current

t = 10 ms; (50 Hz), sine

TJ = 25°C

 

 

6.3

kA

I²t

value for fusing

t = 10 ms; (50 Hz), sine

TJ = 25°C

 

 

198

kA²s

di/dt

Rate of rise of on-state current

TJ = 125°C; f = 50 Hz

tP=200µs;diG/dt=0.15A/µs;

IG=0.15A;VD= ⅔VDRM

repetitive

 

 

160

A/µs

non-repet

 

 

320

A/µs

dv/dt

Maximum linear rate of rise of off-state voltage

VD= ⅔VDRM

RGK =∞; method 1 (linear voltage rise)

TJ = 125°C

 

 

1000

V/µs

VGT

gate trigger voltage

VD = 6V

TJ = 25°C

 

 

2.5

V

IGT

gate trigger current

VD = 6V

TJ = 25°C

 

 

250

mA

IL

latching current

 

TJ = 25°C

 

 

 

A

IH

holding current

 

TJ = 25°C

 

 

300

mA

tgd

gate controlled delay time

 

TJ = 25°C

 

 

2.5

µs

tq

Turn-off time

VR=10 V; IT=20A; VD=⅔VDRM

TJ = 150°C

 

200

400

µs

Tstg

storage temperature

 

 

-60

 

125

°C

TJ

virtual junction temperature

 

 

-60

 

120

°C

Wt

Weight

 

 

 

 

 

g

F

mounting force

 

 

9

 

11

kN

 

Outline Drawing

 

Thyristor 400a 1800v


Product Categories : Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor

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