| Payment Type: | L/C,T/T,Paypal |
|---|---|
| Incoterm: | FOB,CFR,CIF |
Basic Info
Model No.: YZPST-R2619ZC21J
Brand: YZPST
Type: Intrinsic Semiconductor
Additional Info
Productivity: 100
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 500
Certificate: ISO9001-2008,ROHS
HS Code: 85413000
Port: Shanghai
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Product Description
YZPST-R2619ZC21J
Features:
. All Diffused Structure
. Interdigitated Amplifying Gate Configuration
. Guaranteed Maximum Turn-Off Time
. High dV/dt Capability
. Pressure Assembled Device
ELECTRICAL CHARACTERISTICS AND RATINGS
Blocking - Off State
VRRM (1) VDRM (1) VRSM (1) 2100 2100 2200
VRRM = Repetitive peak reverse voltage
VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage (2)
| Repetitive peak reverse leakage and off state leakage | IRRM / IDRM | 20 mA 200 mA (3) |
| Critical rate of voltage rise | dV/dt (4) | 200 V/msec |
Conducting - on state
Parameter Symbol Min. Max. Typ. Units Conditions Average value of on-state current IT(AV)M 2619 A Sinewave,180o conduction,Tc=55oC RMS value of on-state current ITRMS 5227 A Nominal value Peak one cPSTCle surge (non repetitive) current ITSM 33.8 37.2 kA kA 8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC I square t I2t 5.71x106 A2s 8.3 msec Latching current IL - mA VD = 24 V; RL= 12 ohms Holding current IH 1000 mA VD = 24 V; I =2.5 A Peak on-state voltage VTM 2.3 V ITM = 4000 A Critical rate of rise of on-state current (5, 6) di/dt 1500 A/ms Switching from VDRM £ 1000 V, non-repetitive Critical rate of rise of on-state current (6) di/dt 1000 A/ms Switching from VDRM £ 1000 V
Gating
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Peak gate power dissipation | PGM |
| 30 |
| W |
|
| Average gate power dissipation | PG(AV) |
| 5 |
| W |
|
| Peak gate current | IGM |
| - |
| A |
|
| Gate current required to trigger all units | IGT |
| 300 |
| mA | VD = 10 V;IT=3A;Tj = +25 oC
|
| Gate voltage required to trigger all units
| VGT |
| 3 |
| V
| VD = 10 V;IT=3A;Tj = +25 oC
|
| Peak negative voltage | VRGM |
| 5 |
| V |
|
Dynamic
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Delay time | tgd |
| - | 0.8 | ms | VD=67% VDRM, IT=2000A, di/dt=60A/us, IFG=2A, tr=0.5us, Tj=25C |
| Turn-on time | tgt |
| - | 1.5 |
| |
| Turn-off time (with VR = -5 V) | tq |
| - | 50 | ms | ITM=4000A, tp=2000us, di/dt=60A/us, Vr=100V, Vdr=67%VDRM, dVdr/dt=200V/us |
| Reverse recovery current | Irm |
| - |
| A | ITM=4000A, tp=2000us, di/dt=60A/us |
THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Operating temperature | Tj | -40 | +125 |
| oC |
|
| Storage temperature | Tstg | -40 | +150 |
| oC |
|
| Thermal resistance - junction to case | RQ (j-c) |
| - - |
| K/kW | Double sided cooled Single sided cooled |
| Thermal resistamce - case to sink | RQ (c-s) |
| - - |
| K/kW | Double sided cooled * Single sided cooled * |
| Thermal resistamce - junction to sink | RQ (c-s) |
| 11 22 |
| K/kW | Double sided cooled * Single sided cooled * |
| Mounting force | F | 27 | 47 | - | kN |
|
| Weight | W |
|
| 1.7 | Kg | about |
* Mounting surfaces smooth, flat and greased
Note : for case outline and dimensions, see case outline drawing in last page of this Technical Data
| Sym | A | B | C | D | H |
| mm | 109 | 73 | 98 | 3.5×3 | 35±1 |
Product Categories : Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor
Hot Products
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Fill in more information so that we can get in touch with you faster
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Contact Now
