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Basic Info
Model No.: YZPST-KP1000A6500V
Brand: YZPST
Additional Info
Productivity: 100
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 1000
Certificate: ISO9001-2008,ROHS
HS Code: 85413000
Port: Shanghai
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Product Description
Phase Control Thyristors
YZPST-KP1000A6500V
Phase Control Thyristors 6600V is short for thyristor rectifier. It is a kind of high Power Semiconductor Device with four layers of three PN junction, also called thyristor.With the characteristics of small volume, simple structure and strong function, it is one of the most commonly used semiconductor devices.
| Symbol | Definition | Conditions |
| min. | typ. | max. | Unit |
| V | max. non-repetitive reverse/forward blocking voltage | TJ = 25°C |
|
| 6600 | V | |
| V | max. repetitive reverse/forward blocking voltage | TJ = 25°C |
|
| 6500 | V | |
| VT | On-state voltage | IT=1000 A | TJ = 25°C |
|
| 2.95 | V |
| IT(AV) | average forward current | TC=25°C |
|
|
| 1000 | A |
| IT(RMS) | RMS forward current | 180° sine |
|
|
| 1140 | A |
| RthJC | thermal resistance junction to case |
|
|
|
| 22 | K/KW |
| RthCH | thermal resistance case to heatsink |
|
|
|
| 4 | K/KW |
| ITSM | max. forward surge current | t = 10 ms; (50 Hz), sine | TJ = 25°C |
|
| 9.7 | kA |
| I²t | value for fusing | t = 10 ms; (50 Hz), sine | TJ = 25°C |
|
| 470 | kA²s |
| di/dt | Rate of rise of on-state current | TJ = 125°C; f = 50 Hz tP=200µs;diG/dt=0.15A/µs; IG=0.15A;VD= 2/3VDRM | repetitive |
|
| 50 | A/µs |
| non-repet |
|
| 1000 | A/µs | |||
| dv/dt | Maximum linear rate of rise of off-state voltage | VD= 2/3 RGK =∞; method 1 (linear voltage rise) | TJ = 125°C |
|
| 2000 | V/µs |
| VGT | gate trigger voltage | VD = 6V | TJ = 25°C |
|
| 2.6 | V |
| IGT | gate trigger current | VD = 6V | TJ = 25°C |
|
| 400 | mA |
| IL | latching current |
| TJ = 25°C |
|
| 500 | mA |
| IH | holding current |
| TJ = 25°C |
|
| 900 | mA |
| tgd | gate controlled delay time |
| TJ = 25°C |
|
| 3 | µs |
| tq | Turn-off time | VR=10 V; IT=20A; VD= 2/3 | TJ = 150°C |
|
| 600 | µs |
| Tstg | storage temperature |
|
| -40 |
| 140 | °C |
| TJ | virtual junction temperature |
|
|
|
| 125 | °C |
| Wt | Weight |
|
|
|
|
| g |
| F | mounting force |
|
| 14 | 22 | 24 | kN |
Outline Drawing
Product Categories : Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor
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