| Unit Price: | USD 125 - 165 / Piece/Pieces |
|---|---|
| Payment Type: | L/C,T/T,Paypal |
| Incoterm: | FOB,CFR,CIF |
| Min. Order: | 1 Piece/Pieces |
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Basic Info
Model No.: YZPST-R3559TD16K
Brand: YZPST
VRRM: 1600V
VDRM: 1600V
VRSM: 1700V
IRRM / IDRM: 20mA/150mA
DV/dt: 1000V/μsec
Additional Info
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging
Productivity: 100
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 1000
Certificate: ISO9000
HS Code: 85413000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Product Description
HIGH POWER THYRISTOR FOR PHASE CONTROL APPLICATIONS
high power thyristor YZPST-R3559TD16K
Features:
. All Diffused Structure
. Interdigitated Amplifying Gate Configuration
. Guaranteed Maximum Turn-Off Time
. High dV/dt Capability
. Pressure Assembled Device
Blocking - Off State
Device Type VRRM (1) VDRM (1) VRSM (1) R3559TD16K 1600 1600 1700
VRRM = Repetitive peak reverse voltage
VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage (2)
| Repetitive peak reverse leakage and off state leakage | IRRM / IDRM
| 20 mA 150 mA (3) |
| Critical rate of voltage rise | dV/dt (4) | 1000 V/msec |
Notes:
All ratings are specified for Tj=25 oC unless
otherwise stated.
(1) All voltage ratings are specified for an applied
50Hz/60zHz sinusoidal waveform over the
temperature range -40 to +125 oC.
(2) 10 msec. max. pulse width
(3) Maximum value for Tj = 125 oC.
(4) Minimum value for linear and exponential
waveshape to 80% rated VDRM. Gate open.
Tj = 125 oC.
(5) Non-repetitive value.
(6) The value of di/dt is established in accordance
with EIA/NIMA Standard RS-397, Section
5-2-2-6. The value defined would be in addi-
tion to that obtained from a snubber circuit,
comprising a 0.2 mF capacitor and 20 ohms
resistance in parallel with the thristor under
test.
Conducting - on state
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Average value of on-state current | IT(AV) |
| 3500 |
| A | Sinewave,180o conduction,Tc=70oC |
| RMS value of on-state current | ITRMS |
| 7000 |
| A | Nominal value |
| Peak one cPSTCle surge (non repetitive) current |
ITSM |
| 42000
38000 |
| A
A | 8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
| I square t | I2t |
| 7.5x106 |
| A2s | 8.3 msec |
| Latching current | IL |
| 1000 |
| mA | VD = 24 V; RL= 12 ohms |
| Holding current | IH |
| 500 |
| mA | VD = 24 V; I = 2.5 A |
| Peak on-state voltage | VTM |
| 1.95 |
| V | ITM = 5000 A; Tj = 125 oC |
| Critical rate of rise of on-state current (5, 6) | di/dt |
| 800 |
| A/ms | Switching from VDRM £ 1000 V, non-repetitive |
| Critical rate of rise of on-state current (6) | di/dt |
| 300 |
| A/ms | Switching from VDRM £ 1000 V |
Gating
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Peak gate power dissipation | PGM |
| 200 |
| W | tp = 40 us |
| Average gate power dissipation | PG(AV) |
| 5 |
| W |
|
| Peak gate current | IGM |
| 20 |
| A |
|
| Gate current required to trigger all units | IGT |
| 300 200 125 |
| mA mA mA | VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = +25 oC VD = 6 V;RL = 3 ohms;Tj = +125oC |
| Gate voltage required to trigger all units
| VGT |
0.30 | 5 4
|
| V V V | VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = 0-125oC VD = Rated VDRM; RL = 1000 ohms; Tj = + 125 oC |
| Peak negative voltage | VGRM |
| 20 |
| V |
|
thyristor for phase control applications
High dV/dt thyristor
Product Categories : Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor
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