| Unit Price: | USD 105 - 155 / Bag/Bags |
|---|---|
| Payment Type: | L/C,T/T,Paypal |
| Incoterm: | FOB,CFR,CIF |
| Min. Order: | 1 Bag/Bags |
Basic Info
Model No.: YZPST-5STP24L2800
Brand: YZPST
Additional Info
Transportation: Ocean,Air
Place of Origin: CHINA
Certificate: ISO9000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Product Description
High Power Thyristor Phase Control
YZPST-5STP24L2800
HIGH POWER THYRISTOR FOR PHASE CONTROL FEATURES AND APPLICATIONS
Features:
. All Diffused Structure
. Interdigitated Amplifying Gate Configuration
. Guaranteed Maximum Turn-Off Time
. High dV/dt Capability
. Pressure Assembled Device
Conducting - on state
Parameter Symbol Min. Max. Typ. Units Conditions Average value of on-state current IT(AV)M 2400 A Sinewave,180o conduction,T =85oC c RMS value of on-state current ITRMSM 4120 A Nominal value Peak one cPSTCle surge (non repetitive) current ITSM 46 43 kA kA 8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, T = 125 j oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, T = 125 j oC I square t I2t 8.7x106 A2s 8.3 msec Latching current IL 200 mA VD = 24 V; RL= 12 ohms Holding current IH 75 mA VD = 24 V; I = 2.5 A Peak on-state voltage VTM 1.35 V I = 3000 A; T = 125 oC TM j Threshold vlotage VT0 0.85 V Slope resistance rT 0.16 mΩ Critical rate of rise of on-state current (5, 6) di/dt 300 A/ s Switching from VDRM 1000 V, non-repetitive Critical rate of rise of on-state current (6) di/dt 150 A/ s Switching from VDRM 1000 V
Gating
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Peak gate power dissipation | PGM |
| - |
| W |
|
|
Average gate power dissipation |
PG(AV) |
|
- |
|
W |
|
| Peak gate current | IGM |
| - |
| A |
|
| Gate current required to trigger all units |
IGT |
|
400 |
|
mA | V = 10 V;I =3A;T = +25 oC D T j |
| Gate voltage required to trigger all units |
VGT |
|
2.6 |
|
V |
V = 10 V;I =3A;T = +25 oC D T j |
|
Peak negative voltage |
VRGM |
|
- |
|
V |
|
Dynamic
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Delay time | tgd |
| 3 | - | s | VD=67% VDRM, IT=2000A, di/dt=60A/us, IFG=2A, tr=0.5us, Tj=25C |
| Turn-on time | tgt |
| - | - |
| |
|
Turn-off time (with VR = -5 V) |
tq |
- |
- |
400 |
s | ITM=1000A, tp=1000us, di/dt=60A/us, Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/us |
|
Reverse recovery current |
Irm |
|
- |
|
A | ITM=4000A, tp=2000us, di/dt=60A/us |
THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Operating temperature | Tj | -40 | +125 |
| oC |
|
|
Storage temperature |
Tstg |
-40 |
+140 |
|
oC |
|
| Thermal resistance - junction to case |
R (j-c) |
| 10 20 |
|
K/kW | Double sided cooled * Single sided cooled * |
| Thermal resistamce - case to sink |
R (c-s) |
| 2 4 |
|
K/kW | Double sided cooled * Single sided cooled * |
| Thermal resistance - junction to case |
R (j-s) |
| - - |
|
K/kW | Double sided cooled * Single sided cooled * |
| Mounting force | F | 45 | 60 | 50 | kN |
|
| Weight | W |
|
| 0.9 | Kg | about |
Outline
Product Categories : Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor
Hot Products
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Fill in more information so that we can get in touch with you faster
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Contact Now
