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Basic Info
Model No.: YZPST-N1718NS180
Brand: YZPST
Additional Info
Productivity: 100
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 500
Certificate: ISO9001-2008,ROHS
HS Code: 85413000
Port: Shanghai
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Product Description
HIGH POWER THYRISTOR FOR PHASE CONTROL
YZPST-N1718NS18
Features: Pressure Assembled Device. Interdigitated Amplifying Gate Configuration . All Diffused Structure . High dV/dt Capability . . Guaranteed Maximum Turn-Off Time.
ELECTRICAL CHARACTERISTICS AND RATINGS
Blocking - Off State
| VRRM (1) | VDRM (1) | VRSM (1) |
| 1800 | 1800 | 1900 |
VRRM = Repetitive peak reverse voltage
VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage (2)
| Repetitive peak reverse leakage and off state leakage | IRRM / IDRM | 20 mA 100 mA (3) |
| Critical rate of voltage rise | dV/dt (4) | 1000 V/msec |
Notes:
All ratings are specified for Tj=25 oC unless otherwise stated.
(1) All voltage ratings are specified for an applied
50Hz/60zHz sinusoidal waveform over the
temperature range -40 to +125 oC.
(2) 10 msec. max. pulse width
(3) Maximum value for Tj = 125 oC.
(4) Minimum value for linear and exponential waveshape to 80% rated VDRM. Gate open. Tj = 125 oC.
(5) Non-repetitive value.
(6) The value of di/dt is established in accordance with EIA/NIMA Standard RS-397, Section 5-2-2-6. The value defined would be in addition to that obtained from a ubber circuit,comprising a 0.2 F capacitor and 20 ohmsresistance in parallel with the thristor under test.
Conducting - on state
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Max. average value of on-state current | IT(AV)M |
| 1718 |
| A | Sinewave,180o conduction,Tc=55oC |
| RMS value of on-state current | IT(RMS)m |
| 3450 |
| A | Nominal value |
| Peak one cPSTCle surge (non repetitive) current |
ITSM |
| -
27.2 |
| kA
kA | 8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
| I square t | I2t |
| 3.7x106 |
| A2s | 8.3 msec |
| Latching current | IL |
| - |
| mA | VD = 24 V; RL= 12 ohms |
| Holding current | IH |
| 1000 |
| mA | VD = 24 V; I = 2.5 A |
| Peak on-state voltage | VTM |
| 1.41 |
| V | ITM = 2550 A |
| Critical rate of rise of on-state current (5, 6) | di/dt |
| 1000 |
| A/ms | Switching from VDRM £ 1000 V, non-repetitive |
| Critical rate of rise of on-state current (6) | di/dt |
| 500 |
| A/ms | Switching from VDRM £ 1000 V |
Gating
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Peak gate power dissipation | PGM |
| 30 |
| W |
|
| Average gate power dissipation | PG(AV) |
| 4 |
| W |
|
| Peak gate current | IGM |
| - |
| A |
|
| Gate current required to trigger all units | IGT |
| 300 |
| mA | VD = 10 V;IT=3A;Tj = +25 oC
|
| Gate voltage required to trigger all units
| VGT |
| 3.0 |
| V
| VD = 10 V;IT=3A;Tj = +25 oC
|
| Peak negative voltage | VRGM |
| 5 |
| V |
|
Dynamic
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Delay time | tgd |
| 1.5 | - | ms | VD=67% VDRM, IT=2000A, di/dt=60A/us, IFG=2A, tr=0.5us, Tj=25C |
| Turn-on time | tgt |
| 2.5 | - |
| |
| Turn-off time (with VR = -5 V) | tq | - | 170 | - | ms | ITM=1000A, tp=1000us, di/dt=10A/us, Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/us |
| Reverse recovery current | Irm |
| - |
| A | ITM=4000A, tp=2000us, di/dt=60A/us |
Product Categories : Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor
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