Basic Info
Model No.: YZPST-C458PB
Brand: YZPST
Additional Info
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging
Productivity: 100
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 1000
Certificate: ISO9000
HS Code: 85413000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Product Description
High Power Thyristor
YZPST-DCR1020SF65-1
application of thyristors dc motor thyristor control Pressure Assembled Device thyristorAll ratings are specified for Tj=25 oC unless otherwise stated.
(1) All voltage ratings are specified for an applied 50Hz/60zHz sinusoidal waveform over the temperature range -40 to +125 oC.
(2) 10 msec. max. pulse width
(3) Maximum value for Tj = 125 oC.
(4) Minimum value for linear and exponential waveshape to 80% rated VDRM. Gate open. Tj = 125 oC.
(5) Non-repetitive value.
(6) The value of di/dt is established in accordance with EIA/NIMA Standard RS-397, Section 5-2-2-6. The value defined would be in addi-
tion to that obtained from a snubber circuit, comprising a 0.2 F capacitor and 20 ohms resistance in parallel with the thristor under test.
Features: . All Diffused Structure . Center Amplifying Gate Configuration . Blocking capabilty up to 4200 volts
. Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Average value of on-state current |
IT(AV) |
|
640 |
|
A | Sinewave,180o conduction,T =60oC c |
| RMS value of on-state current | ITRMS |
| 1005 |
| A | Nominal value |
|
Peak one cPSTCle surge (non repetitive) current |
ITSM |
|
-
8.5 |
|
KA KA | 8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, T = 125 j oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, T = 125 j oC |
| I square t | I2t |
| 0.36x106 |
| A2s | 8.3 msec and 10.0 msec |
| Latching current | IL |
| 600 |
| mA | VD = 24 V; RL= 12 ohms |
| Holding current | IH |
| 200 |
| mA | VD = 24 V; I = 2.5 A |
|
Peak on-state voltage |
VTM |
|
3.6 |
|
V | ITM = 1800 A; Duty cPSTCle 0.01%; T = 25 oC j |
| Critical rate of rise of on-state current (5, 6) |
di/dt |
|
- |
|
A/ s | Switching from VDRM 1000 V, non-repetitive |
| Critical rate of rise of on-state current (6) |
di/dt |
|
100 |
|
A/ s |
Switching from VDRM 1000 V |
ELECTRICAL CHARACTERISTICS AND RATINGS
|
Gating
Parameter Symbol Min. Max. Typ. Units Conditions Peak gate power dissipation PGM 150 W tp = 40 us Average gate power dissipation PG(AV) 5 W Peak gate current IGM - A Gate current required to trigger all units IGT - 300 - mA mA mA V = 6 V;R = 3 ohms;T = -40 oC D L j V = 6 V;R = 3 ohms;T = +25 oC D L j V = 6 V;R = 3 ohms;T = +125oC D L j Gate voltage required to trigger all units V - 3.0 - V V V V = 6 V;R = 3 ohms;T = -40 oC D L j V = 6 V;R = 3 ohms;T = 0-125oC D L j VD = Rated VDRM; RL = 1000 ohms; T = + 125 oC j Peak negative voltage VGRM 5 V
Dynamic
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
|
Delay time |
td |
|
- |
0.5 |
s | ITM = 50 A; VD = Rated VDRM Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 s; tp = 20 s |
|
Turn-off time (with VR = -50 V) |
tq |
|
- |
600 |
s | ITM = 1000 A; di/dt = 25 A/ s; VR -50 V; Re-applied dV/dt = 20 V/ s linear to 80% VDRM; VG = 0; T = 125 oC; Duty cPSTCle j 0.01% |
|
Reverse recovery charge |
Qrr |
|
* |
|
C | ITM = 1000 A; di/dt = 25 A/ s; VR -50 V |
* For guaranteed max. value, contact factory.
THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Operating temperature | Tj | -40 | +125 |
| oC |
|
|
Storage temperature |
Tstg |
-40 |
+125 |
|
oC |
|
|
Thermal resistance - junction to case |
R (j-c) |
| 0.022 0.052 |
| o C/W | Double sided cooled Single sided cooled |
|
Thermal resistamce - case to sink |
R (c-s) |
| 0.004 0.008 |
| o C/W | Double sided cooled * Single sided cooled * |
|
Thermal resistamce - junction to sink |
R (j-s) |
| - - |
| o C/W | Double sided cooled * Single sided cooled * |
| Mounting force | P | 18 | 22 |
| kN |
|
| Weight | W |
|
| - | g |
|
* Mounting surfaces smooth, flat and greased
CASE OUTLINE AND DIMENSIONS
Product Categories : Semiconductor Disc Devices(Capsule Type) > Inverter Thyristor
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