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YANGZHOU POSITIONING TECH CO., LTD.
3000V Fast KK thyristors KK1000A
  • 3000V Fast KK thyristors KK1000A

3000V Fast KK thyristors KK1000A

    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF
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Basic Info

Model No.YZPST-63H200

BrandYZPST

TypeIntrinsic Semiconductor

Additional Info

Productivity100

TransportationOcean,Air

Place of OriginChina

Supply Ability500

CertificateISO9001-2008,ROHS

HS Code85413000

PortShanghai

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Product Description

Fast thyristors     

YZPST-63H200

ELECTRICAL CHARACTERISTICS AND RATINGS

Notes:

All ratings are specified for Tj=25 oC unless

otherwise stated.

(1) All voltage ratings are specified for an applied

     50Hz/60zHz sinusoidal waveform over the

     temperature range  -40 to +125 oC.

(2) 10 msec. max. pulse width

(3) Maximum value for Tj = 125 oC.

(4) Minimum value for linear and exponential

    waveshape to 80% rated VDRM. Gate open.

    Tj = 125 oC.

(5) Non-repetitive value.

(6) The value of di/dt is established in accordance

     with EIA/NIMA Standard RS-397, Section

     5-2-2-6. The value defined would be in addi-

     tion to that obtained from a snubber circuit,

     comprising a 0.2 F capacitor and 20 ohms

     resistance in parallel with the thristor under

     test.

Blocking - Off State



VRRM (1)

VDRM (1)

VRSM (1)

3000

3000

3100

       VRRM = Repetitive peak reverse voltage

       VDRM = Repetitive peak off state voltage

       VRSM = Non repetitive peak reverse voltage (2)

Repetitive peak reverse leakage and off state leakage

IRRM / IDRM

100 mA

Critical rate of voltage rise

dV/dt (4)

1000 V/msec



Conducting - on state

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)M

1000

A

Sinewave,180o conduction,Tsink=55oC

RMS value of on-state current

ITRMS

1700

A

Nominal value

Peak one cPSTCle surge

(non repetitive) current

ITSM

15.9

KA

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t

1.26x106

A2s

10.0 msec

Latching current

IL

-

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

1000

mA

VD = 24 V; I =2.5 A

Peak on-state voltage

VTM

2.42

V

ITM =2000 A; Tj = 125 oC

Critical rate of rise of on-state

current (5, 6)

di/dt

-

A/ms

Switching from VDRM £ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

150

A/ms

Switching from VDRM £ 1000 V

ELECTRICAL CHARACTERISTICS AND RATINGS                          

Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

30

W

tp = 40 us

Average gate power dissipation

PG(AV)

5

W

Peak gate current

IGM

-

A

Gate current required to trigger all units

IGT

-

300

-

mA

mA

mA

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = +25 oC

VD = 6 V;RL = 3 ohms;Tj = +125oC

Gate voltage required to trigger all units

VGT

-

3.0

-

V

V

V

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = 0-125oC

VD = Rated VDRM; RL = 1000 ohms;

Tj = + 125 oC

Peak negative voltage

VGRM

5

V

Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

td

1.6

0.8

ms

ITM =500 A; VD = Rated VDRM

Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms

Turn-off time (with VR = -50 V)

tq

-

120

ms

ITM =1000 A; di/dt =25 A/ms;

VR ³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% VDRM; VG = 0;

Tj = 125 oC; Duty cPSTCle ³ 0.01%

Reverse recovery charge

Qrr

-

-

mC

ITM =1000 A; di/dt =25 A/ms;

VR ³ -50 V

* For guaranteed max. value, contact factory.

THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125

oC

Storage temperature

Tstg

-40

+150

oC

Thermal resistance - junction to case

RQ (j-c)

-

-

K/W

Double sided cooled

Single sided cooled

Thermal resistance - case to heatsink

RQ (c-s)

-

-

K/W

Double sided cooled

Single sided cooled

Thermal resistance - junction to heatsink

RQ (j-s)

0.022

0.044

K/W

Double sided cooled

Single sided cooled

Mounting force

P

19

26

kN

Weight

W

510

g

about

* Mounting surfaces smooth, flat and greased

     Note : for case outline and dimensions, see case outline drawing in last page of this Technical Data


Fast thyristors 63H20

Sym

A

B

C

D

H

mm

75

47

66

3.5×3

26±1



 

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