Basic Info
Model No.: YZPST-63H200
Brand: YZPST
Type: Intrinsic Semiconductor
Additional Info
Productivity: 100
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 500
Certificate: ISO9001-2008,ROHS
HS Code: 85413000
Port: Shanghai
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Product Description
Fast thyristors
YZPST-63H200
ELECTRICAL CHARACTERISTICS AND RATINGS
Notes:
All ratings are specified for Tj=25 oC unless
otherwise stated.
(1) All voltage ratings are specified for an applied
50Hz/60zHz sinusoidal waveform over the
temperature range -40 to +125 oC.
(2) 10 msec. max. pulse width
(3) Maximum value for Tj = 125 oC.
(4) Minimum value for linear and exponential
waveshape to 80% rated VDRM. Gate open.
Tj = 125 oC.
(5) Non-repetitive value.
(6) The value of di/dt is established in accordance
with EIA/NIMA Standard RS-397, Section
5-2-2-6. The value defined would be in addi-
tion to that obtained from a snubber circuit,
comprising a 0.2 F capacitor and 20 ohms
resistance in parallel with the thristor under
test.
Blocking - Off State
| VRRM (1) | VDRM (1) | VRSM (1) |
| 3000 | 3000 | 3100 |
VRRM = Repetitive peak reverse voltage
VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage (2)
| Repetitive peak reverse leakage and off state leakage | IRRM / IDRM
| 100 mA
|
| Critical rate of voltage rise | dV/dt (4) | 1000 V/msec |
Conducting - on state
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Average value of on-state current | IT(AV)M |
| 1000 |
| A | Sinewave,180o conduction,Tsink=55oC |
| RMS value of on-state current | ITRMS |
| 1700 |
| A | Nominal value |
| Peak one cPSTCle surge (non repetitive) current |
ITSM |
|
15.9
|
| KA | 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
| I square t | I2t |
| 1.26x106 |
| A2s | 10.0 msec |
| Latching current | IL |
| - |
| mA | VD = 24 V; RL= 12 ohms |
| Holding current | IH |
| 1000 |
| mA | VD = 24 V; I =2.5 A |
| Peak on-state voltage | VTM |
| 2.42 |
| V | ITM =2000 A; Tj = 125 oC |
| Critical rate of rise of on-state current (5, 6) | di/dt |
| - |
| A/ms | Switching from VDRM £ 1000 V, non-repetitive |
| Critical rate of rise of on-state current (6) | di/dt |
| 150 |
| A/ms | Switching from VDRM £ 1000 V |
ELECTRICAL CHARACTERISTICS AND RATINGS
Gating
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Peak gate power dissipation | PGM |
| 30 |
| W | tp = 40 us |
| Average gate power dissipation | PG(AV) |
| 5 |
| W |
|
| Peak gate current | IGM |
| - |
| A |
|
| Gate current required to trigger all units | IGT |
| - 300 - |
| mA mA mA | VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = +25 oC VD = 6 V;RL = 3 ohms;Tj = +125oC |
| Gate voltage required to trigger all units
| VGT |
| - 3.0 - |
| V V V | VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = 0-125oC VD = Rated VDRM; RL = 1000 ohms; Tj = + 125 oC |
| Peak negative voltage | VGRM |
| 5 |
| V |
|
Dynamic
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Delay time | td |
| 1.6 | 0.8 | ms | ITM =500 A; VD = Rated VDRM Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms |
| Turn-off time (with VR = -50 V) | tq |
| - | 120 | ms | ITM =1000 A; di/dt =25 A/ms; VR ³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% VDRM; VG = 0; Tj = 125 oC; Duty cPSTCle ³ 0.01% |
| Reverse recovery charge | Qrr |
| - | - | mC | ITM =1000 A; di/dt =25 A/ms; VR ³ -50 V |
* For guaranteed max. value, contact factory.
THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Operating temperature | Tj | -40 | +125 |
| oC |
|
| Storage temperature | Tstg | -40 | +150 |
| oC |
|
| Thermal resistance - junction to case | RQ (j-c) |
| - - |
| K/W | Double sided cooled Single sided cooled |
| Thermal resistance - case to heatsink | RQ (c-s) |
| - - |
| K/W | Double sided cooled Single sided cooled |
| Thermal resistance - junction to heatsink | RQ (j-s) |
| 0.022 0.044 |
| K/W | Double sided cooled Single sided cooled |
| Mounting force | P | 19 | 26 |
| kN |
|
| Weight | W |
|
| 510 | g | about |
* Mounting surfaces smooth, flat and greased
Note : for case outline and dimensions, see case outline drawing in last page of this Technical Data
| Sym | A | B | C | D | H |
| mm | 75 | 47 | 66 | 3.5×3 | 26±1 |
Product Categories : Semiconductor Disc Devices(Capsule Type) > Inverter Thyristor
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