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Basic Info
Model No.: YZPST-SD233N/R
Brand: YZPST
Additional Info
Productivity: 100
Transportation: Ocean,Air
Place of Origin: CHINA
Supply Ability: 1000
Certificate: ISO9001-2008,ROHS
HS Code: 85411000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Product Description
High Power Fast Recovery Diode
FAST RECOVERY DIODES, Stud Version
Features: High power FAST Recovery Diode series, 1.0 to 2.0 μs recovery time, High voltage ratings up to 5000V, High current capability, Optimized turn on and turn off characteristics, Low forward recovery, Fast and soft reverse recover, Compression bonded encapsulation, Stud version B-8, Maximum junction temperature 125°C
Typical Applications: Snubber diode for GTO, Fast recovery, rectifier applications
Forward Conduction
| Parameters | PSTSD233N/R | Units | Conditions | ||
| IF(AV Max. average forward current
@ Case temperature | 250 | A | 180° conduction, half sine wave | ||
| 60 | °C | ||||
| IF(RMX) Max. RMS forward current | 390 | A |
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| IFSM Max. peak, one-cycle forward
non-repetitive surge current | 5500 | A | t = 10ms | No voltage
reapplied | Initial TJ =TJmax. |
| 5760 | A | t = 8.3ms | |||
| I2t Maximum I2t for fusing | 150000 | A2s | t = 10ms | No voltage
reapplied | |
| 140000 | A2s | t = 8.3ms | |||
| I2√t Maximum I2√t for fusing |
1500000 | KA2√s | I2t for time tx = I2√t x √tx ;
0.1 ≤ tx ≤ 10ms, VRRM = 0V | ||
| VFM Maximum forward voltage drop | 3.0 | V | TJ = 25 oC, IFM = 1200 (arm) | ||
| IRRM Max. DC reverse current | 10.0 | μA | TJ = 25 oC, per diode at VRRM | ||
| Trr | 5 | μs | | ||
Outlines Table
Product Categories : Semiconductor Stud Devices > Fast Recovery Stud Diode
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