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Basic Info
Model No.: YZPST-Z20A-ZK20A18
Brand: YZPST
Additional Info
Productivity: 1000
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 10000
Certificate: ISO9001-2008,ROHS
HS Code: 85411000
Port: Shanghai
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Product Description
Good Performance Fast Diode
YZPST-Z20A-ZK20A18
Quick recovery diodes are also commonly represented by graphics symbols of ordinary diodes, either in text or in type.Fast recovery diodes are similar to ordinary diodes, but the manufacturing process is different from that of ordinary single-pole tubes.The doping concentration near the PN junction is very low to obtain higher switching speed and lower forward pressure drop.Its reverse recovery time is 200 ~ 750 ns, high speed up to 10 ns.Compared with schottky diode, its voltage resistance is much higher.It is mainly used as a high speed rectifier element, and as a Rectifier Diode in switching power supply and inverter power supply, so as to reduce off loss, improve efficiency and reduce noise
Forward Conduction
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Repetitive peak reverse voltage | VRRM |
|
| 1800 | V |
|
| Non repetitive peak reverse voltage | VRSM |
|
| 1900 | V |
|
| Max. average forward current | IF(AV) |
|
| 20 | A | Sinewave,180o conduction,Tc=100oC |
| Max. RMS forward current | IF(RMS) |
|
| 33 | A | Nominal value; Tc=100oC |
| Max. peak, one-cycle forward, non-repetitive surge current | IFSM |
|
| 0.3 | kA | 10.0 msec (50Hz), half sinewave, Tvj = Tvj max, VRM = 0.6VRRM |
| Maximum I2t for fusing | I2t |
|
| 4.9 | kA2s | |
| Max. forward voltage drop | VF |
|
| 2.15 | V | IF = 650A; Tvj = Tvj max |
| Threshold voltage | VTO |
|
| 1.1 | V | IF < 500A |
| Slope resistance | rT |
|
| 1.5 | mΩ |
Thermal and Mechanical Specifications
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Repetitive peak reverse leakage and off state | IRRM |
| 70 |
| mA | Tvj = Tvj max |
| Operating temperature | Tj | -40 | +140 |
| oC |
|
| Storage temperature | Tstg | -40 | +150 |
| oC |
|
| Maximum Reverse Recovery Time | Trr |
|
| 2.2 | μS |
|
| Reverse recovery charge | Qrr |
|
| 870 | μAc |
|
| Thermal resistance - junction to case | RQ (j-c) |
| - - | 0.26 | oC/W |
|
| Thermal resistamce - case to heatsink | RQ (c-s) |
| - - | 0.04 | oC/W |
|
| Mounting force | P |
|
| 20 | Nm | ± 20% |
| Weight | W | - | - | - | g | About |
| Case style |
|
|
| - |
| See Outline Table |
Product Categories : Semiconductor Stud Devices > Fast Recovery Stud Diode
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