| Unit Price: | USD 360 / Piece/Pieces |
|---|---|
| Payment Type: | L/C,T/T,Paypal |
| Incoterm: | FOB,CFR,CIF |
| Min. Order: | 20 Piece/Pieces |
Basic Info
Model No.: YZPST-KT50BT-5STR03T2040
Brand: YZPST
Type: Intrinsic Semiconductor
Additional Info
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging
Productivity: 100
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 500
Certificate: ISO9001-2008,ROHS
HS Code: 85413000
Port: Shanghai
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Product Description
REVERSE CONDUCTING THYRISTORS
YZPST-KT50BT-5STR03T2040
Features:
. Integrated freewheeling diode
. Optimized for low dynamic losses
Blocking - Off State
| VRRM (1) | VDRM (1) | VRSM (1) |
| 2000 | 2000 | 2100 |
VRRM = Repetitive peak reverse voltage
VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage (2)
| Repetitive peak reverse leakage and off state leakage | IRRM / IDRM | 10 mA 70 mA (3) |
| Critical rate of voltage rise | dV/dt (4) | 1000 V/msec |
Notes:
All ratings are specified for Tj=25 oC unless otherwise stated.
(1) All voltage ratings are specified for an applied
50Hz/60zHz sinusoidal waveform over the
temperature range -40 to +125 oC.
(2) 10 msec. max. pulse width
(3) Maximum value for Tj = 125 oC.
(4) Minimum value for linear and exponential waveshape to 80% rated VDRM. Gate open. Tj = 125 oC.
(5) Non-repetitive value.
(6) The value of di/dt is established in accordance with EIA/NIMA Standard RS-397, Section 5-2-2-6. The value defined would be in addition to that obtained from a ubber circuit,comprising a 0.2 F capacitor and 20 ohmsresistance in parallel with the thristor under test.
onducting - on state
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Average value of on-state current | IT(AV)M IF(AV)M |
| 360 223 |
| A | Sinewave,180o conduction,Tc=70oC |
| RMS value of on-state current | ITRMS |
| 566 351 |
| A | Nominal value |
| Peak one cPSTCle surge (non repetitive) current | ITSM
IFSM |
|
5000
3500 |
| A
A | 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
| I square t | I2t |
| 125x103 61x103 |
| A2s | 8.3 msec |
| Latching current | IL |
| 500 |
| mA | VD = 24 V; RL= 12 ohms |
| Holding current | IH |
| 100 |
| mA | VD = 24 V; I =2.5 A |
| Peak on-state voltage | VTM VFM |
| 2.61 3.42 |
| V | ITM = 1000 A |
| Critical rate of rise of on-state current (5, 6) | di/dt |
| - |
| A/ms | Switching from VDRM £ 1000 V, non-repetitive |
| Critical rate of rise of on-state current (6) | di/dt |
| 400 |
| A/ms | Switching from VDRM £ 1000 V |
Gating
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Peak gate power dissipation | PGM |
| - |
| W |
|
| Average gate power dissipation | PG(AV) |
| 5 |
| W |
|
| Peak gate current | IGM |
| 25 |
| A |
|
| Gate current required to trigger all units | IGT |
| 400 |
| mA | VD = 10 V;IT=3A;Tj = +25 oC
|
| Gate voltage required to trigger all units | VGT |
| 2.5 |
| V | VD = 10 V;IT=3A;Tj = +25 oC |
| Peak negative voltage | VRGM |
| 2 |
| V |
|
Dynamic
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Delay time | tgd |
| 1.0 |
| ms | VD=67% VDRM, IT=2000A, di/dt=60A/us, IFG=2A, tr=0.5us, Tj=25C |
| Turn-on time | tgt |
| - |
|
| |
| Turn-off time (with VR = -5 V) | tq |
| 40 | - | ms | ITM=4000A, tp=2000us, di/dt=60A/us, Vr=100V, Vdr=67%VDRM, dVdr/dt=200V/us |
| Reverse recovery current | Irm |
| - |
| A | ITM=4000A, tp=2000us, di/dt=60A/us |
THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Operating temperature | Tj | -40 | +125 |
| oC |
|
| Storage temperature | Tstg | -40 | +120 |
| oC |
|
| Thermal resistance - junction to case | RQ (j-c)
RQ (j-c)D |
| 55 140 88 165 |
| K/kW | Double sided cooled Single sided cooled Double sided cooled Single sided cooled |
| Thermal resistamce - case to sink | RQ (c-s) |
| 10 20 |
| K/kW | Double sided cooled * Single sided cooled * |
| Mounting force | F | 8 | 12 | - | kN |
|
| Weight | W |
|
| - | Kg |
|
* Mounting surfaces smooth, flat and greased
Note : for case outline and dimensions, see case outline drawing in page 3 of this Technical Data
| Sym | A | B | C | D | H |
| mm | 68 | 45 | 62 | 3.5×3 | 20±1 |
Product Categories : Semiconductor Disc Devices(Capsule Type) > Reverse Conducting Thyristor(RCT)
Hot Products
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Fill in more information so that we can get in touch with you faster
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Contact Now
