Communicate with Supplier? Supplier
John chang Mr. John chang
What can I do for you?
Chat Now Contact Supplier
YANGZHOU POSITIONING TECH CO., LTD.
Home > Products > Semiconductor Disc Devices(Capsule Type) > Rectifier Diode(Standard Diode) > S4A010120A TO220-2 Silicon Carbide Schottky Diode
S4A010120A TO220-2 Silicon Carbide Schottky Diode
S4A010120A TO220-2 Silicon Carbide Schottky Diode
S4A010120A TO220-2 Silicon Carbide Schottky Diode
S4A010120A TO220-2 Silicon Carbide Schottky Diode
S4A010120A TO220-2 Silicon Carbide Schottky Diode
  • S4A010120A TO220-2 Silicon Carbide Schottky Diode
  • S4A010120A TO220-2 Silicon Carbide Schottky Diode
  • S4A010120A TO220-2 Silicon Carbide Schottky Diode
  • S4A010120A TO220-2 Silicon Carbide Schottky Diode
  • S4A010120A TO220-2 Silicon Carbide Schottky Diode

S4A010120A TO220-2 Silicon Carbide Schottky Diode

    Unit Price: USD 0.86 - 1.25 / Piece/Pieces
    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF

Download:

Contact Now

Basic Info

Model No.YZPST-S4A010120A

BrandYZPST

Place Of OriginChina

PackageTO-220-2

VRRM1200V

VRSM1200V

VR1200V

IF TC ≤ 25℃30A

IFSM95A, 150W

Additional Info

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity100000000

TransportationOcean,Land,Air,Express

Place of OriginCHINA

Supply Ability10000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Product Description

P/N:YZPST-S4A010120A
Silicon Carbide Schottky Diode
Features
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
Positive Temperature Coefficient on VF
Temperature-independent Switching
175°C Operating Junction Temperature
Benefits
Replace Bipolar with Unipolar Device
Reduction of Heat Sink Size
Parallel Devices Without Thermal Runaway
Essentially No Switching Losses
Applications
Switch Mode Power Supplies
Power Factor Correction
Motor drive, PV Inverter, Wind Power Station
YZPST-S4A010120A-2

Maximum Ratings

 

Symbol

Parameter

Value

Unit

Test Conditions

Note

vRRM

Repetitive Peak Reverse Voltage

1200

V

TC = 25C

 

vRSM

Surge Peak Reverse Voltage

1200

V

TC = 25C

 

vR

DC Blocking Voltage

1200

V

TC = 25C

 

 IF

 Forward Current

30

14

10

 A

TC ≤ 25C

TC ≤ 135C

TC ≤ 150C

 

IFSM

Non-Repetitive Forward Surge Current

95

A

TC = 25C, tp = 8.3ms, Half Sine Wave

 

Ptot

Power Dissipation

150

W

TC = 25C

Fig.3

TC

Maximum Case Temperature

150

C

   

TJ , TSTG

Operating Junction and Storage Temperature

-55 to 175

C

   
 

TO-220 Mounting Torque

1

Nm

M3 Screw

 

Electrical Characteristics

 

Symbol

Parameter

Typ.

Max.

Unit

Test Conditions

Note

VF

Forward Voltage

1.55

2.2

1.8

2.5

V

IF = 10A, TJ = 25C

IF = 10A, TJ = 175C

Fig.1

 IR

Reverse Current

2

10

20

200

µA

VR = 1200V, TJ = 25C

VR = 1200V, TJ = 175C

Fig.2

 C

Total Capacitance

650

49

40

 /

pF

VR = 0V, TJ = 25C, f = 1MHz    VR = 400V, TJ = 25C, f = 1MHz VR = 800V, TJ = 25C, f = 1MHz

Fig.5

C

Total Capacitive Charge

29

/

nC

VR = 800V, IF = 10A

di/dt = 200As, TJ = 25C

Fig.4

Package Dimensions

 

Package TO-220-2

YZPST-S4A010120A TO-220

 

Product Categories : Semiconductor Disc Devices(Capsule Type) > Rectifier Diode(Standard Diode)

Email to this supplier
  • Mr. John chang
  • Your message must be between 20-8000 characters

Home > Products > Semiconductor Disc Devices(Capsule Type) > Rectifier Diode(Standard Diode) > S4A010120A TO220-2 Silicon Carbide Schottky Diode
Send Inquiry
*
*

Home

Product

Whatsapp

About Us

Inquiry

苏ICP备05018286号-1
We will contact you immediately

Fill in more information so that we can get in touch with you faster

Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.

Send