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Home > Products > Semiconductor Disc Devices(Capsule Type) > Rectifier Diode(Standard Diode) > High power standard rectifier factory and manufacturer
High power standard rectifier factory and manufacturer
High power standard rectifier factory and manufacturer
  • High power standard rectifier factory and manufacturer
  • High power standard rectifier factory and manufacturer

High power standard rectifier factory and manufacturer

    Unit Price: USD 260 - 350 / Piece/Pieces
    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF
    Min. Order: 2 Piece/Pieces
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Basic Info

Model No.YZPST-D6001N50

BrandYZPST

Average Value Of On-state Current5790A

RMS Value Of On-state Current9100A

Peak One Cycle Surge (non Repetitive) Cu110KA

Peak On-state Voltage1.30V

VFMReverse Recovery Current (4)400A

Additional Info

Packaging1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity1000

TransportationOcean,Air

Place of OriginCHINA

Supply Ability5000

CertificateISO9001-2015,ROHS

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Product Description


GENERAL PURPOSE HIGH POWER STANDARD RECTIFIER

YZPST-D6001N50

Features:

. All Diffused Structure

. High Surge rating                

. Soft Reverse Recovery

. Rugged Ceramic Hermetic Package

. Pressure Assembled Device

Typical Applications:

. Rectifier for Drives Applications

. Medium voltage converters

. Pulsed power applications

. Crowbar Applications

ELECTRICAL CHARACTERISTICS AND RATINGS

Reverse Blocking

VRRM (1)

VRSM (1)

5000

5100

VRRM = Repetitive peak reverse voltage

VRSM = Non repetitive peak reverse voltage (2)

Repetitive peak reverse leakage

IRRM

30 mA

400 mA (3)

Notes:

All ratings are specified for Tj=25 oC unless

otherwise stated.

(1) All voltage ratings are specified for an applied

     50Hz/60zHz sinusoidal waveform over the

     temperature range  -40 to +150 oC.

(2) 10 msec. max. pulse width

(3) Maximum value for Tj = 150 oC.

(4) See parameter definition below :

YZPST-D6001N50-2


Conducting - on state

Parameter

Symbol

Min

Max.

Typ

Units

Conditions

Average value of on-state current

IF(AV)M

 

5790

 

A

Sinewave,180oconduction,Tc=100oC

RMS value of on-state current

IFRMS

 

9100

 

A

Nominal value

Peak one cycle surge

(non repetitive) current

IFSM

 

110

 

kA

Tj=160°C, VR=0, tp=10ms

I square t

I2t

 

60.5

 

MA2s

10 msec

Peak on-state voltage

VFM

 

1.30

 

V

IFM = 6000 A; Tj = 160 oC

Reverse Recovery Current (4)

IRM(REC)

 

400

 

A

IFM = 1000 A; dIF/dt = 10 A/ms,

Tj = 160 oC

Forward threshold voltage, max

VF0

 

0.674

 

V

Tj=Tj max;

 

Forward slope resistance, max

rT

 

0.104

 

Reverse Recovery Charge (4)

Qrr

 

-

15000

mC

 

Reverse Recovery Time (4)

tRR

 

-

 

ms

CASE OUTLINE AND DIMENSIONS

YZPST-D6001N50(5)


Sym

A

B

C

D

H

mm

150

100

126

3.5×3

26±1



Product Categories : Semiconductor Disc Devices(Capsule Type) > Rectifier Diode(Standard Diode)

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