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Home > Products > Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor > KP300A1600V stud type Thyristors ST330S16
KP300A1600V stud type Thyristors ST330S16
  • KP300A1600V stud type Thyristors ST330S16

KP300A1600V stud type Thyristors ST330S16

    Unit Price: USD 35 / Piece/Pieces
    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF
    Min. Order: 20 Piece/Pieces
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Basic Info

Model No.YZPST-ST330S16

BrandYZPST

TypeIntrinsic Semiconductor

Additional Info

Packaging1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity100

TransportationOcean,Air

Place of OriginChina

Supply Ability500

CertificateISO9001-2008,ROHS

HS Code85413000

PortShanghai

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Product Description

Phase Control Thyristors

YZPST-ST330S16

Features

● Center amplifying gate configuration

● Compression bonded encapsulation

● High dV/dt Capability

● Stud type, thread inch or metric

Typical Applications
● Medium power switching
● DC power supplies

Maximum Ratings And Characteristics

Symbol

Parameter

Values

Units

Test Conditions

ON-STATE

ITAV

Mean on-state current

330

A

Sinewave,180° conduction,Tc=75

ITRMS

RMS value of on-state current

520

A

Nominal value

ITSM

Peak one cycle surge

(non repetitive) current

9000

A

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I2t

I square t

405

KA2s

8.3 msec and 10.0 msec

IL

Latching current

1000

mA

VD = 24 V; RL= 12 ohms

IH

Holding current

600

mA

VD = 24 V; I = 2.5 A

VTM

Peak on-state voltage

1.51

V

ITM = 1040 A; Duty cycle £ 0.01%

di/dt

Critical rate of rise

of on-state current

non-repetitive

1000

A/ms

Tj =100 oC V D= 1/2VDRM, ITM=(2x ITAV) A

Gate pulse:tw≥20μs, tr≤0.5μs fG=50Hz

IGM≥5 IGT

repetitive

-

BLOCKING

VDRM

VRRM

Repetitive peak off state voltage

Repetitive peak reverse voltage

1600

V

VDSM

VRSM

Non repetitive peak off state voltage

Non repetitive peak reverse voltage

1700

V

IDRM

IRRM

Repetitive peak off state current Repetitive peak reverse  current

50

mA

Tj = 100 oC ,VRRM VDRM applied

dV/dt

Critical rate of voltage rise

500

V/ms

Tj = 100 oC VD =0.67 VDRM  Gate open

TRIGGEING

PG(AV)

Average gate power dissipation

2.0

W

PGM

Peak gate power dissipation

10

W

IGM

Peak gate current

3.0

A

IGT

Gate trigger current

200

mA

TC = 25 oC

VGT

Gate trigger voltage

3.0

V

TC = 25 oC

VGD

Gate non-trigger voltage

0.25

V

Tj = 125 oC

SWITCHING

tq

Turn-off time

100

ms

Qrr

Reverse recovery charge

-



Thermal And Mechanical

 

Symbol

Parameter

Values

Units

Test Conditions

Tj

Operating temperature

-40~125

oC

Tstg

Storage temperature

-40~150

oC

R th (j-c)

Thermal resistance - junction to case

0.1

K/W

DC operation ,Single sided cooled

R th (c-s)

Thermal resistance - case to sink

0.03

K/W

Single sided cooled

P

Mounting force

48.5

Nm

W

Weight

530

g

about

OUTLINE

Thyristors ST330S16(2)

Product Categories : Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor

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