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Home > Products > Semiconductor Plastic Package > Bi Directions Thyristor (Triac) > TO-220 BTA312-600B 600V Triacs sensitive gate
TO-220 BTA312-600B 600V Triacs sensitive gate
TO-220 BTA312-600B 600V Triacs sensitive gate
TO-220 BTA312-600B 600V Triacs sensitive gate
TO-220 BTA312-600B 600V Triacs sensitive gate
TO-220 BTA312-600B 600V Triacs sensitive gate
  • TO-220 BTA312-600B 600V Triacs sensitive gate
  • TO-220 BTA312-600B 600V Triacs sensitive gate
  • TO-220 BTA312-600B 600V Triacs sensitive gate
  • TO-220 BTA312-600B 600V Triacs sensitive gate
  • TO-220 BTA312-600B 600V Triacs sensitive gate

TO-220 BTA312-600B 600V Triacs sensitive gate

    Unit Price: USD 0.1 - 0.13 / Piece/Pieces
    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF

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Basic Info

Model No.YZPST-BTA312-600B

BrandYZPST

Place Of OriginChina

VDRM600V

VRRM600V

IT(RMS)12A

Tj-40--+125℃

Tstg-40~ 150℃

ITSM100A

Additional Info

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity1000000000

TransportationOcean,Land,Air

Place of OriginCHINA

Supply Ability1000000000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Product Description

Triacs sensitive gate  YZPST-BTA312-600B

GENERAL DESCRIPTION
Passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is requiredin all four quadrants.

TO-220


ABSOLUTE MAXIMUM RATING( Ta = 25 )

Parameter Symbol Typ Unit
Repetitive peak VDRM 600 V
off-state voltages VRRM
RMS on-state current IT(RMS) 12 A
Non-repetitive peak on-state current ITSM 100 A
Max.Operating Tj 85
Junction temperature
Storage Temperature Tstg 110

ELECTRICAL CHARACTERISTICS ( Ta = 25 )

Parameter Symbol Test       Conditions Min Typ Max Unit
Repetitive peak off-state voltages VDRM 600 V
VRRM
RMS on-state current IT(RMS) Full sine wave, Tmb107 12 A
On-state voltage VT IT=17A 1.3 1.55 V
Holding current IH VD  = 12 V; IGT  = 0.1 A 50 mA
Gate trigger current T2+G+ 12 50
T2+G- IGT VD=12V, IT=0.1A 14 50 mA
T2-G- 25 50
Latching T2+G+ 70
current T2+G- IL VD  = 12 V; IGT  = 0.1 A 80 mA
T2-G- 70
Gate trigger voltage VGT VD  = 12 V; IT  = 0.1 A 1.6 V


Product Categories : Semiconductor Plastic Package > Bi Directions Thyristor (Triac)

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