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YANGZHOU POSITIONING TECH CO., LTD.
Home > Products > Semiconductor Plastic Package > Bi Directions Thyristor (Triac) > Single mesa structure BTA12-800BW 800V Triac TO-220A
Single mesa structure BTA12-800BW 800V Triac TO-220A
Single mesa structure BTA12-800BW 800V Triac TO-220A
Single mesa structure BTA12-800BW 800V Triac TO-220A
Single mesa structure BTA12-800BW 800V Triac TO-220A
Single mesa structure BTA12-800BW 800V Triac TO-220A
Single mesa structure BTA12-800BW 800V Triac TO-220A
  • Single mesa structure BTA12-800BW 800V Triac TO-220A
  • Single mesa structure BTA12-800BW 800V Triac TO-220A
  • Single mesa structure BTA12-800BW 800V Triac TO-220A
  • Single mesa structure BTA12-800BW 800V Triac TO-220A
  • Single mesa structure BTA12-800BW 800V Triac TO-220A
  • Single mesa structure BTA12-800BW 800V Triac TO-220A

Single mesa structure BTA12-800BW 800V Triac TO-220A

    Unit Price: USD 0.12 - 0.16 / Piece/Pieces
    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF

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Basic Info

Model No.YZPST-BTA12-800BW

BrandYZPST

Place Of OriginChina

IT (RMS)12A

VDRM / VRRM800V

VTM1.55V

ITSM155A

I2t70A2S

DI/dt50A/ μs

IGM4A

PG(AV)1W

Tstg-40--+150℃

Tj-40--+125℃

Additional Info

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity10000000000

TransportationOcean,Land,Express,Others

Place of OriginCHINA

Supply Ability1000000000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Product Description

YZPST-BTA12-800BW
●Product features
Single   mesa structure (Single   Mesa),
Table glass passivation process,
Voltage stability
The ability of strong current shock resistance
The applicable model: BTA12
The main purpose
Washing machine, the hair straightened
Solid state relay, AC motor speed control
●Package

TO-220A

BTA12-600C

Main    Feature (Tj=25)

Symbol

Value

Unit

IT (RMS)

12

A

VDRM   / VRRM

600/800

V

VTM

1.55

V

Absolute ratings (Limiting Values)

Symbol

Parameter

Value

Unit

ITSM

Non repetitive surge peak on-state

Current (tp=10ms)

115

A

I2t

(tp=10ms)

70

A2S

dI/dt

IG=2IGT tr100ns,Tj=125

50

A/ μs

IGM

Peak gate current(tp=20us)

4

A

PG(AV)

Average gate power

1

W

Tstg

Tj

Storage temperature

Operating junction temperature

-40--+150

-40--+125

Thermai Resistances

Symbol
Parameter Value Unit
TO-220A 2.3
Rth (j-c) Junction to case TO-220B/TO-220C 1.4 /W
TO-220F 3.9

Electrical characteristics (Tj=25℃ unless otherwise stated)

 

Symbol Test Conditions Value Unit
TW SW CW BW C B
IGT VD=12V, RL=30Ω ⅠⅡⅢ 5 10 25 50 25 50 mA
---- ---- ---- ---- 50 100
IDRM VD=VDRM Tj=25℃ 5 μA
Tj=125℃ 1 mA
IRRM VD=VRRM Tj=25℃ 5 μA
Tj=125℃ 1 mA
ⅠⅢ 10 25 50 70 40 50
IL IG=1.2IGT ---- ---- ---- ---- 40 50 mA
15 30 60 80 80 100
VGT VD=12V ,RL=30Ω 1.3 V
VGD VD=VDRM, Tj=125℃RL=3.3KΩ 0.2 V
VTM ITM=17A,tp=380 μs 1.55 V
IH VD=12V IT=200mA 20 25 35 50 25 50 mA
dV/dt VD=67%VDRM, 40   1000 400 v/ μs
GateOpen, Tj=125℃ 100 400 200

Measure of   package

TO-220A



Product Categories : Semiconductor Plastic Package > Bi Directions Thyristor (Triac)

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