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YANGZHOU POSITIONING TECH CO., LTD.

Company Details

YANGZHOU POSITIONING TECH CO., LTD.

[Jiangsu,China]

Business Type:Trade Company , Distributor/Wholesaler , Manufacturer , Service

Main Markets: Africa , Americas , Asia , Europe , Worldwide

Exporter:91% - 100%

Certs:ISO9001, REACH, RoHS, Test Report, UL

Description:8A TO-220 Triac,BTA208-800D Triac,High Dv/dt 8A Triac

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Home > Products > Semiconductor Plastic Package > Bi Directions Thyristor (Triac) > High dv/dt BTA208-800D 800V 8A TO-220 triac

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High dv/dt BTA208-800D 800V 8A TO-220 triac

Unit Price:

USD 0.09 - 0.11 / Piece/Pieces

Payment Type:

L/C,T/T,Paypal

Incoterm:

FOB,CFR,CIF

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Basic Info

Model No.: YZPST-BTA208-800D

Brand: YZPST

Place Of Origin: China

IT(RMS): 8A

VDRM/VRRM: 600/800V

IGT: ≤10mA

ITSM T=20ms: 65A

ITSM T= 16.7ms: 71A

I2t: 21A2S

Di/dt: 100A/μs

Additional Info

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity: 1000000000

Transportation: Ocean,Land,Express,Others

Place of Origin: CHINA

Supply Ability: 1000000000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Product Description

BTA208 TRIACS

YZPST-BTA208-800D

DESRCRIPTION:
Due to separation glass passivation, these devices have good
performance at dv/dt and reliability. The Triac series is suitable for general purpose AC switching. They can be used as an On-Off
function in the applications such as static relays, heating regulation, or for phase control operation in light dimmers, motor speed
controllers.

TO-220

MAIN FEATURES

Symbol	Value	Unit
IT(RMS)	8	A
VDRM/VRRM	600/800	V
IGT	≤10	mA

ABSOLUTE MAX I MUM RATINGS

Symbol	PARAMETER		Value	Unit
IT(RMS)	RMS on-state current(full sine wave)	TO-220.Non-Ins TC≤102℃	8	A
	Non repetitive surge peak on-state current	t=20ms	65
ITSM	(full sine wave, Tj=25℃)	t= 16.7ms	71	A
I2t	I2t Value for fusing	t= 10ms	21	A2S
di/dt	Repetitive rate of rise of on-state Current after triggering	ITM = 12 A; IG = 0.2 A dIG/dt = 0.2 A/us	100	A/μs
IGM	Peak gate current	—	2	A
VGM	Peak gate voltage	—	5	W
PGM	Peak gate power	—	5	W
PG(AV)	Average gate power	over any 20 ms period	0.5	W
Tstg	Storage junction temperature range	-40 to +150		℃
Tj	Operating junction temperature range	125		℃

ELECTRICAL CHARACTERISTICS (Tj = 25。C, unless otherwise specified)

STATIC CHARACTERISTICS

Symbol				Value
Symbol	Parameter	Test Condition	Quadrant	MIN	TYPE	MAX	Unit
IGT	Gate trigger current	VD= 12V, IT=0. 1A	Ⅰ-Ⅱ-Ⅲ	-	-	10	mA
		VD= 12V, IT=0. 1A		-	0.7	1.5
VGT	Gate trigger voltage	VD=400V, IT=0. 1A,Tj= 125°C		0.25	0.4	-	V
VT	On-state voltage	IT= 10A		-	1.3	1.65	V
IH	Holding current	VD= 12V, IGT=0. 1A	Ⅰ-Ⅱ-Ⅲ	-	-	60	mA
			Ⅰ-Ⅲ	-	-	60	mA
IL	Latching current	VD= 12V, IGT=0. 1A	Ⅱ	-	-	90	mA
ID	Off-state leakage current	VD = VDRM(max); Tj= 125 ˚C		-	0.1	0.5	mA

DYNAMIC CHARACTERISTICS

Symbol			Value
	Parameter	Test Condition	MIN	TYPE	Unit
dVD/dt	Critical rate of rise of off- state voltage	VDM = 67% VDRM(max); Tj = 125 ˚C	1000	4000	V/us
		exponential waveform; gate open circuit
dIcom/dt	Critical rate of change of commutating current	VDM = 400 V; Tj = 125 ˚C; IT(RMS) = 8 A; without snubber; gate open circuit		14	A/ms
T	Gate controlled turn-on time	ITM = 12 A; VD = VDRM(max) ; IG = 0. 1 A; dIG/dt = 5 A/µs		2	us
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