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Home > Products > Semiconductor Plastic Package > Bi Directions Thyristor (Triac) > 600V BT139X-600D triac with low holding and latching current
600V BT139X-600D triac with low holding and latching current
600V BT139X-600D triac with low holding and latching current
600V BT139X-600D triac with low holding and latching current
600V BT139X-600D triac with low holding and latching current
600V BT139X-600D triac with low holding and latching current
  • 600V BT139X-600D triac with low holding and latching current
  • 600V BT139X-600D triac with low holding and latching current
  • 600V BT139X-600D triac with low holding and latching current
  • 600V BT139X-600D triac with low holding and latching current
  • 600V BT139X-600D triac with low holding and latching current

600V BT139X-600D triac with low holding and latching current

    Unit Price: USD 0.13 - 0.16 / Piece/Pieces
    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CIF,CFR

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Basic Info

Model No.YZPST-BT139X-600D

BrandYZPST

Place Of OriginChina

IT(RMS)16A

VDRM600V

VRRM800V

VTM≤1.6V

Tstg-40~150℃

Tj-40~125℃

ITSM140A

Additional Info

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity1000000000

TransportationOcean,Land,Air,Others

Place of OriginCHINA

Supply Ability1000000000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CIF,CFR

Product Description

P/N: YZPST-BT139 Series 16A Triacs

YZPST-BT139X-600D 


DESCRIPTION:

With low holding and latching current, BT139 Series triacs are especially recommended for    use on middle and small resistance type power load.

MAIN FEATURES:

symbol

value

unit

IT(RMS)

16

A

VDRM/VRRM

600/800

V

VTM

≤1.6

V

ABSOLUTE MAXIMUM RATINGS:

Parameter Symbol Value Unit
Storage junction temperature range Tstg -40~150
Operating junction temperature range Tj -40~125
Repetitive peak off-state voltage (Tj=25) VDRM 600/800 V
Repetitive peak reverse voltage (Tj=25) VRRM 600/800 V
RMS on-state current IT(RMS) 16 A
Non repetitive surge peak on-state current
(full cycle, F=50Hz) ITSM 140 A
I2t value for fusing (tp=10ms) I2t 98 A2s
Critical rate of rise of on-state current (IG=2 × IGT) - - 50
dI/dt 10 A/ μs
Peak gate current IGM 2 A

Average gate power dissipation

PG(AV)

0.5

W

Peak gate power

PGM

5

W

ELECTRICAL CHARACTERISTICS (Tj=25unless otherwise specified)

Parameter Value
Test Condition Quadrant D E F Unit
Ⅰ- Ⅱ-Ⅲ 5 10 25
IGT 10 25 70 mA
VGT VD=12V, RL=33Ω Ⅰ- Ⅱ-Ⅲ-Ⅳ MAX 1.3 V
VGD VD=VDRM Ⅰ- Ⅱ-Ⅲ-Ⅳ MIN 0.2 V
IH IT=100mA MAX 10 20 40 mA
Ⅰ-Ⅲ-Ⅳ 15 30 50
IL IG=1.2IGT MAX 20 40 70 mA
VD=0.66×VDRM   Tj=125 Gate open
dV/dt MIN 20 50 100 V/ µs

THERMAL RESISTANCES

Symbol Test Condition Value Unit
TO-220C 1.3
Rth(j-c) junction to case(AC) TO-220A(Ins) 2 /W

PACKAGE MECHANICAL DATA

YZPST-BT139X-600D TO-220F


Product Categories : Semiconductor Plastic Package > Bi Directions Thyristor (Triac)

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