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Home > Products > Semiconductor Plastic Package > Bi Directions Thyristor (Triac) > Fast switching 1500V N-Channel MOSFET
Fast switching 1500V N-Channel MOSFET
Fast switching 1500V N-Channel MOSFET
Fast switching 1500V N-Channel MOSFET
Fast switching 1500V N-Channel MOSFET
Fast switching 1500V N-Channel MOSFET
  • Fast switching 1500V N-Channel MOSFET
  • Fast switching 1500V N-Channel MOSFET
  • Fast switching 1500V N-Channel MOSFET
  • Fast switching 1500V N-Channel MOSFET
  • Fast switching 1500V N-Channel MOSFET

Fast switching 1500V N-Channel MOSFET

    Unit Price: USD 2.15 - 2.65 / Piece/Pieces
    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF

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Basic Info

Model No.YZPST-QM3N150C

BrandYZPST

Place Of OriginChina

Vdss1500V

ID Continuous (Tc = 25 °C )3A

ID Continuous ( Tc = 100 °C )1.8A

Idm12A

EAS225mJ

Dv/dt5V/ns

Additional Info

Packaging1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity1000000000

TransportationOcean,Air

Place of OriginChina

Supply Ability10000000000

CertificateISO9001-2008,ROHS

HS Code85413000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Product Description


1500V N-Channel MOSFET

YZPST-QM3N150C

General Description

This Power MOSFET is produced using advanced

self- aligned planar technology. This advanced

technology has been especially tailored to minimize

on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode.

These devices can be used in various power switching

circuit for system miniaturization and higher efficiency.

Features

3A, 1500V, RD5(on)typ. = 50@VGS= 10 V ld=1.5A

Low gate charge (typical 37nC)

Low reverse transfer capacitance (typical2.8pf)

Fast switching

100% avalanche tested

YZPST-QM3N150C(4)

Absolute Maximum Ratings Tc=25 Cunles otherwise noted

Symbol Parameter YZPST-QM3N150C Units
Voss Drain-Source Voltage 1500 V
lo Drain Current Continuous(Tc=25℃) 3 A
Continuous(Tc=100℃) 1.8 A
loM Drain Current - Pulsed                   (Note  1) 12 A
VGss Gate-Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy           (Note  2) 225 mJ
dv/dt Peak Diode Recovery dv/dt                (Note  3) 5 V/ns
Po Power  Dissipation(Tc=25℃) 32 W
T,Tsts Operating anc Storage Temperature Range -55 to+150
Tt Maximum lead temperature for soldering purposes
1/8" frome case for 5 seconds
300

TO-3PH Package lInformation

TO-3PH.jpg


Product Categories : Semiconductor Plastic Package > Bi Directions Thyristor (Triac)

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