| Unit Price: | USD 48 - 60 / Piece/Pieces |
|---|---|
| Payment Type: | L/C,T/T,Paypal |
| Incoterm: | FOB,CFR,CIF |
| Min. Order: | 1 Piece/Pieces |
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Basic Info
Model No.: YZPST-A1237NC280
Brand: YZPST
IDRM: 60mA
IRRM: 10mA
Tjm: -40~125℃
Additional Info
Productivity: 1000
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 1000
Certificate: ISO9001-2008,ROHS
HS Code: 85413000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Product Description
YZPST-A1237NC280
Asymmetric Thyristor 25V company has passed ISO9001 quality system certification and the quality is guaranteed.Suitable for your needs of SCR.
Blocking - Off State
| VDRM (1) | VDSM (1) | VRRM (1) | VRSM(1) |
| 2800 | 2800 | 30 | 30 |
VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage
Notes:
All ratings are specified for Tj=25 oC unless
otherwise stated.
(1) All voltage ratings are specified for an applied
50Hz/60zHz sinusoidal waveform over the
temperature range -40 to +125 oC.
(2) 10 msec. max. pulse width
(3) Maximum value for Tj = 125 oC.
(4) Minimum value for linear and exponential
waveshape to 80% rated VDRM. Gate open.
Tj = 125 oC.
(5) Non-repetitive value.
(6) The value of di/dt is established in accordance
with EIA/NIMA Standard RS-397, Section
5-2-2-6. The value defined would be in addi-
tion to that obtained from a snubber circuit,
comprising a 0.2 mF capacitor and 20 ohms
resistance in parallel with the thristor under
test.
| Repetitive peak reverse leakage and off state leakage | IRRM / IDRM
| 10 mA 60 mA (3) |
| Critical rate of voltage rise | dV/dt (4) | 3000 V/msec |
Conducting - on state
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Average value of on-state current | IT(AV)M |
| 1237 |
| A | Sinewave,180o conduction,Tc=55oC |
| RMS value of on-state current | ITRMSM |
| 2555 |
| A | Nominal value |
| Peak one cycle surge (non repetitive) current |
ITSM |
| -
18 |
| KA
KA | 8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
| I square t | I2t |
| 1.62x103 |
| KA2s | 8.3 msec and 10.0 msec |
| Latching current | IL |
| - |
| mA | VD = 24 V; RL= 12 ohms |
| Holding current | IH |
| 1000 |
| mA | VD = 24 V; I = 2.5 A |
| Peak on-state voltage | VTM |
| 2.1 |
| V | ITM = 2000 A; Duty Cycle £ 0.01%; Tj =125 oC |
| Threshold vlotage | VT0 |
| 1.7 |
| V |
|
| Slope resistance | rT |
| 0.21 |
| mΩ |
|
| Critical rate of rise of on-state current (5, 6) | di/dt |
| 2000 |
| A/ms | Switching from VDRM £ 1000 V, non-repetitive |
| Critical rate of rise of on-state current (6) | di/dt |
| 1000 |
| A/ms | Switching from VDRM £ 1000 V |
Gating
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Peak gate power dissipation | PGM |
| 30 |
| W |
|
| Average gate power dissipation | PG(AV) |
| 10 |
| W |
|
| Peak gate current | IGM |
| - |
| A |
|
| Gate current required to trigger all units | IGT |
| - 400 - |
| mA mA mA | VD = 10 V;RL = 3 ohms;Tj = -40 oC VD = 10 V;RL = 3 ohms;Tj = +25 oC VD = 10 V;RL = 3 ohms;Tj = +125oC |
| Gate voltage required to trigger all units
| VGT |
| - 3.0 -
|
| V V V | VD = 10 V;RL = 3 ohms;Tj = -40 oC VD = 10 V;RL = 3 ohms;Tj = 0-125oC VD = Rated VDRM; RL = 1000 ohms; Tj = + 125 oC |
| Peak negative voltage | VRGM |
| 10 |
| V |
|
Dynamic
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Delay time | td |
| - | 1 | ms | ITM = 50 A; VD = Rated VDRM Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms |
| Turn-off time (with VR = -50 V) | tq |
| - | 20 | ms | ITM = 1000 A; di/dt = 25 A/ms; VR ³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% VDRM; VG = 0; Tj = 125 oC; Duty cycle ³ 0.01% |
| Reverse recovery charge | Qrr |
| - | - | mC | ITM = 1000 A; di/dt = 25 A/ms; VR ³ -50 V |
THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Operating temperature | Tj | -40 | +125 |
| oC |
|
| Storage temperature | Tstg | -40 | +150 |
| oC |
|
| Thermal resistance - junction to case | RQ (j-c) |
| - - |
| K/KW | Double sided cooled Single sided cooled |
| Thermal resistamce - case to heatsink | RQ (c-s) |
| - - |
| K/KW | Double sided cooled * Single sided cooled * |
| Thermal resistamce - junction to heatsink | RQ (j-s) |
| 24 48 |
| K/KW | Double sided cooled * Single sided cooled * |
| Mounting force | P | 19 | 26 |
| kN |
|
| Weight | W |
|
| 510 | g | About |
Product Categories : Semiconductor Disc Devices(Capsule Type) > Asymmetric Thyristor
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