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Home > Products > Semiconductor Module Devices > Thyristor Module > Thyristor with amplifying gate 25A thyristor modules
Thyristor with amplifying gate 25A thyristor modules
Thyristor with amplifying gate 25A thyristor modules
Thyristor with amplifying gate 25A thyristor modules
  • Thyristor with amplifying gate 25A thyristor modules
  • Thyristor with amplifying gate 25A thyristor modules
  • Thyristor with amplifying gate 25A thyristor modules

Thyristor with amplifying gate 25A thyristor modules

    Unit Price: USD 1.85 - 2.2 / Bag/Bags
    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF

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Basic Info

Model No.YZPST-SG25AA60

BrandYZPST

Supply TypeOriginal Manufacturer, Odm, Agency, Retailer

Reference MaterialsDatasheet, Photo

ConfigurationArray

Current-breakdownNot Applicable

Current-hold (Ih) (maximum)Not Applicable

Current-off State (maximum)Not Applicable

SCR Number, DiodeNot Applicable

Operating Temperature-55°c ~ 150°c (Tj)

SCR TypeStandard Recovery

StructureNot Applicable

Voltage-onNot Applicable

Voltage-gate Trigger (Vgt) (maximum)Not Applicable

Current-output (maximum)Not Applicable

IT(AV)25A

ITRMS39A

ITSM0.45kA

I2t1.04kA2S

VDRM/VRRM600V

Di/dt100A/us

Viso2000V

Tj-40 ~ + 125℃

Tstg-40 ~ + 125℃

Additional Info

Productivity100000

TransportationOcean,Air

Place of OriginChina

Supply Ability10000

CertificateISO9001-2008,ROHS

HS Code85413000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Product Description

Thyristor modules 

YZPST- SG25AA60

Features
Heat transfer through aluminium nitride ceramic isolated metal baseplate
Precious metal pressure contacts for high reliability
Thyristor with amplifying gate

Typical Applications

· DC motor control

· Temperature control

· Professional light dimming


Maximum Ratings

Symbol

Condition

Ratings

Unit

IT(AV)

Single phase half wave sin 180° conduction ;TC=70°C

25

A

ITRMS

Single phase half wave sin 180° conduction

39

A

ITSM

Tj= Tj MAX

0.45

kA

I2t

Tj= Tj MAX

1.04

kA2S

VDRM/VRRM

Tj= Tj MAX

600

V

di/dt

non-repetitive

100

A/us

Viso

A.C. 1minute/1S

2000

V

Tj

 

-40   ~    + 125

°C

Tstg

 

-40   ~    + 125

°C

W

About

23

g

Electrical Characteristics

Symbol

Condition

Ratings

Unit

IDRM /IRRM

AtVDRM Single phase half wave Tj= Tj MAX

5

mA

VTM

On-State Current 78A Tj=25°C

1.40

V

VT(TO)

Tj= Tj MAX

-

V

T

Tj= Tj MAX

-

mΩ

RK1G1

 

-

Ω

RK2G2

 

-

Ω

tgd

Tj=25°C;VD=0.4VDRM ; ITM=ITAV

-

us

tq

dvD/dt=50V/us; Tj= Tj MAX; ITM=ITAV

-

us

IGT/VGT

Tj=25°C IT=1A VD=6V

40 / 3.0

mA/V

VGD

VD=67%VDRM

0.2

V

DV/DT

VD=67%VDRM

100

V/us

IH

Tj=25°C

30

mA

IL

Tj=25°C

-

mA

Rth(j-c)

Thermal resistance Junction to case; per module

1.6

°C /W

Rth(c-h)

Thermal resistance case to heatsink; per module

-

K/W


Outline Drawing


Thyristor with amplifying gate 25A thyristor modules







Product Categories : Semiconductor Module Devices > Thyristor Module

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