| Unit Price: | USD 45 - 55 / Piece/Pieces |
|---|---|
| Payment Type: | L/C,T/T,Paypal |
| Incoterm: | FOB,CFR,CIF |
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Basic Info
Model No.: YZPST-SP50N80FX
Brand: YZPST
Supply Type: Original Manufacturer, Odm, Agency, Retailer
Reference Materials: Datasheet, Photo
Configuration: Array
Current-breakdown: Not Applicable
Current-hold (Ih) (maximum): Not Applicable
Current-off State (maximum): Not Applicable
SCR Number, Diode: Not Applicable
Operating Temperature: -55°c ~ 150°c (Tj)
SCR Type: Standard Recovery
Structure: Not Applicable
Voltage-on: Not Applicable
Voltage-gate Trigger (Vgt) (maximum): Not Applicable
Current-output (maximum): Not Applicable
VDSS: 800V
ID: 50A
IDM: 200A
VGSS: ±30V
EAS: 4500mJ
EAR: 60mJ
P: 690w
TJ, Tstg: -55~+150ºC
Additional Info
Productivity: 100000
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 10000
Certificate: ISO9001-2008,ROHS
HS Code: 85413000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Product Description
800V N-Channel Power MOSFET
YZPST-SP50N80FX
FEATURES
Fast switching
100% avalanche tested
Improved dv/dt capability
APPLICATIONS
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply (UPS)
Power Factor Correction (PFC)
| Device Ordering Marking Packing Information | |||
|
Ordering Number |
Package |
Marking |
Packing |
|
SP50N80FX |
SOT-227 |
SP50N80FX |
Tube |
| Absolute Maximum Ratings TC = 25ºC, unless otherwise noted | |||
| Parameter | Symbol | Value | Unit |
| Drain-Source Voltage (VGS = 0V) | VDSS | 800 | V |
| Continuous Drain Current | ID | 50 | A |
| Pulsed Drain Current (note1) | IDM | 200 | A |
| Gate-Source Voltage | VGSS | ±30 | V |
| Single Pulse Avalanche Energy (note2) | EAS | 4500 | mJ |
| Repetitive Avalanche Energy (note1) | EAR | 60 | mJ |
| Power Dissipation (TC = 25ºC) | PD | 690 | W |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55~+150 | ºC |
| Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. | |||
| Thermal Resistance | |||
| Parameter | Symbol | Value | Unit |
| Thermal Resistance, Junction-to-Case | RthJC | 0.18 |
ºC/W |
| Thermal Resistance, Junction-to-Ambient | RthJA | 40 | |
| Specifications TJ = 25ºC, unless otherwise noted | ||||||
|
Parameter |
Symbol |
Test Conditions | Value |
Unit | ||
| Min. | Typ. | Max. | ||||
| Static | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250µA | 800 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS =800, VGS = 0V, TJ = 25ºC | -- | -- | 1.0 | μA |
| Gate-Source Leakage | IGSS | VGS = ±30V | -- | -- | ±100 | nA |
| Gate-Source Threshold Voltage | VGS(th) | IDS = 250µA | 2.5 | -- | 4.5 | V |
| Drain-Source On-Resistance (Note3) | RDS(on) | VGS = 10V, ID = 25A | -- | 120 | 130 | mΩ |
| Dynamic | ||||||
| Input Capacitance | Ciss |
VGS = 0V, VDS = 25V, f = 1.0MHz | -- | 14600 | -- |
pF |
| Output Capacitance | Coss | -- | 1300 | -- | ||
| Reverse Transfer Capacitance | Crss | -- | 66 | -- | ||
| Total Gate Charge | Qg |
VDD =400V, ID =50A, VGS = 10V | -- | 360 | -- |
nC |
| Gate-Source Charge | Qgs | -- | 80 | -- | ||
| Gate-Drain Charge | Qgd | -- | 120 | -- | ||
| Turn-on Delay Time | td(on) |
VDD = 400V, ID =50A, RG = 10 Ω | -- | 110 | -- |
ns |
| Turn-on Rise Time | tr | -- | 200 | -- | ||
| Turn-off Delay Time | td(off) | -- | 160 | -- | ||
| Turn-off Fall Time | tf | -- | 185 | -- | ||
| Drain-Source Body Diode Characteristics | ||||||
| Continuous Body Diode Current | IS |
TC = 25 ºC | -- | -- | 50 |
A |
| Pulsed Diode Forward Current | ISM | -- | -- | 400 | ||
| Body Diode Voltage | VSD | TJ = 25ºC, ISD = 25A, VGS = 0V | -- | -- | 1.4 | V |
| Reverse Recovery Time | trr | VGS = 0V,IS = 50A, diF/dt =100A /μs | -- | 520 | -- | ns |
| Reverse Recovery Charge | Qrr | -- | 5.0 | -- | μC | |
Notes
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. VDD = 50V, RG = 25 Ω, Starting TJ = 25 ºC
Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1%
Product Categories : Semiconductor Module Devices > Thyristor Module
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