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YANGZHOU POSITIONING TECH CO., LTD.
Home > Products > Semiconductor Module Devices > Thyristor Module > Dual thyristor modules 80A for high reliability
Dual thyristor modules 80A for high reliability
Dual thyristor modules 80A for high reliability
Dual thyristor modules 80A for high reliability
Dual thyristor modules 80A for high reliability
  • Dual thyristor modules 80A for high reliability
  • Dual thyristor modules 80A for high reliability
  • Dual thyristor modules 80A for high reliability
  • Dual thyristor modules 80A for high reliability

Dual thyristor modules 80A for high reliability

    Unit Price: USD 10 - 13 / Bag/Bags
    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF
    Min. Order: 10 Bag/Bags
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Basic Info

Model No.YZPST-PWB80A40

BrandYZPST

CertificationOther

Encapsulation StructureCeramic Packaged Transistor

FunctionOther

StructureOther

MaterialOther

VDRM/VRRM400/400V

ITRMS125A

ITSM2280A

I2t26kA2S

Additional Info

Productivity10000

TransportationOcean,Air

Place of OriginChina

Supply Ability10000

CertificateISO9001-2008,ROHS

HS Code85413000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Product Description


Dual Thyristor Modules

YZPST-PWB80A40

Features

Heat transfer through aluminium nitride ceramic isolated metal baseplate

Precious metal pressure contacts for high reliability

Thyristor with amplifying gate

Typical Applications

· DC motor control

· AC motor soft starters

· Temperature control

· Professional light dimming




Maximum Ratings

 

Symbol

Condition

Ratings

Unit

IT(AV)

Single phasehalf wave85° conduction

80

A

ITRMS

Single phasehalf wave35° conduction

125

A

ITSM

Tj=125

2280

A

I2t

Tj=125

26

kA2S

VDRM/VRRM

 

400/400

V

di/dt

non-repetitive

50

A/us

Viso

A.C.1minute

3000

V

Tj

 

-30  ~  + 125

Tstg

 

-30  ~  + 125

W

 

-

g

 

 

 

Electrical Characteristics

 

Symbol

Condition

Ratings

Unit

IDRM /IRRM

AtVDRMSingle phasehalf waveTj=125

12

mA

VTM

On-State Current 240ATj=25

1.2

V

VT(TO)

Tj=125

-

V

tgd

Tj=25

10

us

tq

Tj=125

-

us

IGT/VGT

Tj=25

150 / 2

mA/V

VGD

VD=67%VDRM , Tj=125

0.25

V

DV/DT

VD=67%VDRM

50

V/us

IH

Tj=25

100

mA

IL

Tj=25

-

mA

Rth(j-c)

Per Module

-

K/W

YZPST-PWB80A40-1




Product Categories : Semiconductor Module Devices > Thyristor Module

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