| Payment Type: | L/C,T/T,Paypal |
|---|---|
| Incoterm: | FOB,CFR,CIF |
Basic Info
Model No.: YZPST-1690-TO-247S
Brand: YZPST
Additional Info
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging
Productivity: 1000
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 10000
Certificate: ISO9001-2008,ROHS
HS Code: 85413000
Port: Shanghai
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Product Description
YZPST-1690-TO-247S
DESCRIPTION:
PST1690 series of silicon controlled rectifiers, with high ability to withstand the shock loading of large current, provide high dv/dt rate with strong resistance to electromagnetic interference. They are especially recommended for use on solid state relay, motorcycle, power charger, T-tools etcSCR transistor Power Transistor price with great price
ABSOLUTE MAXIMUM RATINGS
| Parameter | Symbol | Value | Unit |
| Storage junction temperature range | Tstg | -40-150 | ℃ |
| Operating junction temperature range | Tj | -40-125 | ℃ |
| Repetitive peak off-state voltage | VDRM | 1600 | V |
| Repetitive peak reverse voltage | VRRM | 1600 | V |
| Average on-state current (TC=80℃) | IT(AV) | 56 | A |
| RMS on-state current(TC=80℃) | IT(RMS) | 90 | A |
| Non repetitive surge peak on-state current (tp=10ms) |
ITSM |
1250 |
A |
| I2t value for fusing (tp=10ms) | I2t | 7800 | A2s |
| Critical rate of rise of on-state current (IG=2×IGT) |
dI/dt |
150 |
A/μs |
| Peak gate current | IGM | 10 | A |
| Peak gate power | PGM | 20 | W |
| Average gate power dissipation(Tj=125℃) | PG(AV) | 2 | W |
ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)
|
Symbol |
Test Condition | Value |
Unit | ||
| MIN. | TYP. | MAX. | |||
| IGT |
VD=12V RL=30Ω | 10 | - | 80 | mA |
| VGT | - | - | 1.5 | V | |
| VGD | VD=VDRM Tj=125℃ | 0.25 | - | - | V |
| IL |
IG=1.2 IGT | - | - | 200 | mA |
| IH |
IT=1A | - | - | 150 | mA |
| dV/dt | VD=2/3VDRM Tj=125℃ Gate Open | 1000 | - | - | V/μs |
STATIC CHARACTERISTICS
| Symbol | Parameter | Value(MAX) | Unit | |
| VTM | ITM=110A tp=380μs | TC=25℃ | 1.8 | V |
| IDRM |
VD=VDRM VR=VRRM | TC=25℃ | 50 | μA |
| IRRM | TC=125℃ | 10 | mA | |
THERMAL RESISTANCES
| Symbol | Parameter | Value | Unit |
| Rth(j-c) | junction to case(DC) | 0.27 | ℃/W |
Product Categories : Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR)
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