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Home > Products > Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR) > SCR transistor power transistor price with great price
SCR transistor power transistor price with great price
  • SCR transistor power transistor price with great price

SCR transistor power transistor price with great price

    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF
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Basic Info

Model No.YZPST-1690-TO-247S

BrandYZPST

Additional Info

Packaging1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity1000

TransportationOcean,Air

Place of OriginChina

Supply Ability10000

CertificateISO9001-2008,ROHS

HS Code85413000

PortShanghai

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Product Description

PST1690 Series     90A SCRs

YZPST-1690-TO-247S

DESCRIPTION:

PST1690 series of silicon controlled rectifiers, with high ability to withstand the shock loading of large current, provide high dv/dt rate with strong resistance to electromagnetic interference. They are especially recommended for use on solid state relay, motorcycle, power charger, T-tools etc

SCR transistor Power Transistor price with great price

ABSOLUTE MAXIMUM RATINGS

 

Parameter

Symbol

Value

Unit

Storage junction temperature range

Tstg

-40-150

Operating junction temperature range

Tj

-40-125

Repetitive peak off-state voltage

VDRM

1600

V

Repetitive peak reverse voltage

VRRM

1600

V

Average on-state current (TC=80)

IT(AV)

56

A

RMS on-state current(TC=80)

IT(RMS)

90

A

Non repetitive surge peak on-state current

(tp=10ms)

 

ITSM

 

1250

 

A

I2t value for fusing (tp=10ms)

I2t

7800

A2s

Critical rate of rise of on-state current

(IG=2×IGT)

 

dI/dt

 

150

 

A/μs

Peak gate current

IGM

10

A

Peak gate power

PGM

20

W

Average gate power dissipation(Tj=125)

PG(AV)

2

W


ELECTRICAL CHARACTERISTICS
(Tj=25 unless otherwise specified)

 

Symbol

 

Test Condition

Value

 

Unit

MIN.

TYP.

MAX.

IGT

 

VD=12V RL=30Ω

10

-

80

mA

VGT

-

-

1.5

V

VGD

VD=VDRM Tj=125

0.25

-

-

V

IL

 

IG=1.2 IGT

-

-

200

mA

IH

 

IT=1A

-

-

150

mA

dV/dt

VD=2/3VDRM Tj=125 Gate Open

1000

-

-

V/μs

STATIC CHARACTERISTICS

Symbol

Parameter

Value(MAX)

Unit

VTM

ITM=110A tp=380μs

TC=25

1.8

V

IDRM

 

VD=VDRM VR=VRRM

TC=25

50

μA

IRRM

TC=125

10

mA

THERMAL RESISTANCES

Symbol

Parameter

Value

Unit

Rth(j-c)

junction to case(DC)

0.27

/W


Detailed Images

Product Categories : Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR)

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