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Home > Products > Semiconductor Plastic Package > Plastic Package Diode > 10KV High Frequency High Voltage Diode
10KV High Frequency High Voltage Diode
10KV High Frequency High Voltage Diode
10KV High Frequency High Voltage Diode
  • 10KV High Frequency High Voltage Diode
  • 10KV High Frequency High Voltage Diode
  • 10KV High Frequency High Voltage Diode

10KV High Frequency High Voltage Diode

    Unit Price: USD 0.9 - 1.25 / Piece/Pieces
    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF

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Basic Info

Model No.YZPST-HV37-10F

BrandYZPST

Additional Info

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity10000

TransportationOcean,Air

Place of OriginChina

Supply Ability100000

CertificateISO9001-2008,ROHS

HS Code85411000

PortShanghai

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Product Description


High Frequency High Voltage Diode

YZPST-HV37-10F

8KV High Frequency High Voltage Diode 200mA


Characteristics

1. High junction temperature up to 130℃

2. Low forward voltage drop, and small current leakage

3. Avalanche breakdown protection

4.Max reverse recovery time to 70nS

5. Excellent properties against HV surge impact

6. Axial leading wires which are weldable

7. Epoxy package with anti-corrosion properties on surface

Application

• Rectification for microwave oven

• Industrial microwave power supplies

• HF X ray source

• Laser power supply

• Voltage multiplying circuits

• Rectification of power supplies for other electronic devices

1.Main Specification

No.

 

Item

 

Symbol

 

Unit

 

Rating

 

Conditions

 

 

1

 

 

Repetitive Peak Reverse Voltage

 

VRRM

 

KV

 

 

10

 

 

 

 

2

 

 

 

Average Forward Current

 

 

IF (AV)

 

 

mA

 

 

200

Tamb=60 oC

 

50HZ Sine-half Wave

 

Rectification Average Value

 

 

 

3

 

 

Forward Surge Current

 

 

IFSM

 

 

A

 

 

 

15

Tamb=25 oC

 

50HZ Sine-half Wave,One Shot

 

 

4

 

 

Reverse Surge Current

 

 

IRSM

 

μA

 

 

5

 

 

5

 

Maximum Junction Temperature

 

Tjmax

 

oC

 

130

 

 

6

 

 

Storage Temperature

 

Tstg

 

oC

 

-40~+130

2.   Electric Specification

 

NO.

 

Item

 

Symbol

Unit

 

Rating

 

Test conditions

 

1

 

Forward Voltage Drop

 

VFM

 

V

 

18max

 

IFM=200mA

 

2

 

 

Normal Temperature Reverse Current

 

IRM1

 

μA

 

5max

 

VRM=8KV

3

 

 

High Temperature Reverse Current

 

IRM2

 

μA

 

5max

Tamb=100oC VRM=8KV

 

4

 

 

Reverse Breakdown Voltage

 

VZ

 

KV

 

8

 

IR=200mA

 

5

 

 

Reverse Recovery Time

 

trr

 

nS

 

70

 

IF=2mA, IRM=4mA  90%



(Tamb=25 oC, unless otherwise specified)

3.    Application

For high voltage rectification;

4. Derating of Forward Current

YZPST-HV37-10F-1



5.Dimensions (in mm))

10KV High Frequency High Voltage Diode




Product Categories : Semiconductor Plastic Package > Plastic Package Diode

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