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Home > Products > Semiconductor Plastic Package > Plastic Package Diode > 5KV/5.0A High Voltage Silicon diode for 5G radio base station
5KV/5.0A High Voltage Silicon diode for 5G radio base station
5KV/5.0A High Voltage Silicon diode for 5G radio base station
5KV/5.0A High Voltage Silicon diode for 5G radio base station
  • 5KV/5.0A High Voltage Silicon diode for 5G radio base station
  • 5KV/5.0A High Voltage Silicon diode for 5G radio base station
  • 5KV/5.0A High Voltage Silicon diode for 5G radio base station

5KV/5.0A High Voltage Silicon diode for 5G radio base station

    Unit Price: USD 11 - 13 / Piece/Pieces
    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF
    Min. Order: 100 Piece/Pieces
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Basic Info

Model No.YZPST-1N5603-1

BrandYZPST

Manufacturing TechnologyDiscrete Device

MaterialElement Semiconductor

TypeN-type Semiconductor

Peak Reverse Working Voltage5KV

Peak Reverse Current5.0uA

Maximum Forward Voltage Drop6.0V

Maximum Surge Current Rating0.5A

Additional Info

Packaging1. Anti-electrostatic packaging 2. Carton box

Productivity10000

TransportationOcean,Air

Place of OriginChina

Supply Ability100000

CertificateISO9001-2008,ROHS

HS Code85411000

PortShanghai

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Product Description

High Voltage Silicon Assembly Series

YZPST-1N5603


FEATURES

* Using the tube core combination technology level of

the most advanced production.

* Low leakage current, low power, -40 operating

junction temperature C to + 175 degrees C degrees.

* Excellent anti instantaneous large current impact

resistance and reverse avalanche characteristics.

* Original heat conduction performance, efficient heat

dissipation design.

* General and different shapes and sizes to choose or

custom.

* In the circuit in high voltage rectifier, isolation,

protection effect.

Application
●Industrial microwave power supply, such as  for  5G radio base station;
●High frequency heater
●High voltage generator
●High voltage rectifier used in electrostatic cleaning


YZPST-1N5603(1)


 

DEVICE ELECTRICAL CHARACTERISTICS

(25ambient temperature unless stated otherwise)

 

CONDITIONS

 

SYMBOL

5KV/5.0A

Maximum Repetitive Peak Reverse Voltage

 

VRRM

5KV

Peak Reverse Working Voltage

 

VRWM

5KV

Average Forward Current Maximum

 

IO

5.0A

Maximum Surge Current Rating

 

IFSM

150A

Maximum Forward Voltage Drop

@5A

VFM

6.0V

Peak Reverse Current

@25

IRRM

5.0uA

Maximum Junction Temperature

 

TJ

150

Storage Temperature Range

 

Tstg

-40~+150




Symbol

Size

D

85

mm

H

30

mm

L

10

mm

M

8

mm

YZPST-1N5603 Dimensions

Product Categories : Semiconductor Plastic Package > Plastic Package Diode

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