| Unit Price: | USD 10.6 - 9.2 / Piece/Pieces |
|---|---|
| Payment Type: | L/C,T/T,Paypal |
| Incoterm: | FOB,CFR,CIF |
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Basic Info
Model No.: YZPST-SDKF2X300-06B2
Brand: YZPST
Place Of Origin: China
VR: 600V
VRRM: 600V
IF(AV) TC=75℃, Per Diode: 300A
IF(AV) TC=75℃, Per Module: 2X300A
IF(RMS): 430A
Ptot: 875W
TJ: -40 to +150℃
Tstg: -40 to +125℃
Additional Info
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid
Productivity: 100000000
Transportation: Ocean,Land,Air,Express
Place of Origin: CHINA
Supply Ability: 10000000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Product Description
ABSOLUTE MAXIMUM RATINGS( T C =25 ° C unless otherwise specified)
| Symbol | Parameter/Test Conditions | Values | Unit | |
| VR | Maximum D.C. Reverse Voltage | 600 | V | |
| VRRM | Maximum Repetitive Reverse Voltage | |||
| Average Forward Current | 300 |
A | ||
| TC=75℃, Per Module | 2X300 | |||
| RMS Forward Current | TC=75°C, Per Diode | 430 | ||
| IFSM | Non Repetitive Surge Forward Current | TJ=45℃,t=10/8.3ms,Sine,50/60Hz | 2400/2640 | |
| TJ= 150℃ ,t=10/8.3ms,Sine,50/60Hz | 2160/2380 | |||
| I2t | For Fusing | TJ=45℃,t=10/8.3ms,Sine,50/60Hz | 28800/29300 | A2S |
| TJ= 150℃ ,t=10/8.3ms,Sine,50/60Hz | 23300/23800 | |||
| Power Dissipation,TC=25℃, | 875 | W | ||
| TJ | Junction Temperature | ℃ | ||
| Storage Temperature Range | -40 to +125 | ℃ | ||
| Visol | Isolation Breakdown Voltage | AC, 50Hz(R.M.S), t=1minute/ 1s | 3000/3600 | V |
| Md | Module to Sink | Recommended（M6） | 4.7 | Nm |
| Module Electrodes | Recommended（M6） | 4.7 | Nm | |
| RthJC | Junction to Case Thermal Resistance(Per Diode ) | 0.143 | ℃ /W | |
| Weight |
| 170 | g | |
ELECTRICAL CHARACTERISTICS (T C =25 ° C unless otherwise specified)
| Symbol | Parameter/Test Conditions | Min. | Typ. | Max. | Unit | ||
| IR | Maximum Reverse Leakage Current | VR = 600V, TJ = 25℃ | 12 | mA | |||
| VR = 480V, TJ = 25/ 125℃ | 3/80 | ||||||
| VF | Forward Voltage | IF=150A,TJ=25/ 125℃ | 1.27/ 1.05 | V | |||
| IF=260A,TJ=25/ 125℃ | 1.36/ 1.19 | ||||||
| VTO | For power-loss calculations only | 0.85 | V | ||||
| trr | Reverse Recovery Time(IF = 300A, d IF/dt = -400A/ μs, VR = 300V,TJ = 100℃) | 250 | 300 | ns | |||
| rT | 1.34 | m Ω | |||||
| IRRM | Maximum Reverse Recovery Current | IF=300A, VR =300V, d IF/dt =- 400A/ μs | TJ = 25℃ | 44 | |||
| TJ = 100℃ | 66 | A | |||||
Product Categories : Semiconductor Module Devices > Diode Module
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