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Home > Products > Semiconductor Module Devices > Bridge Rectifier > 1200V silicon rectifier bridge module
1200V silicon rectifier bridge module
  • 1200V silicon rectifier bridge module

1200V silicon rectifier bridge module

    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF
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Basic Info

Model No.YZPST-MDQ100-12

BrandYZPST

Additional Info

Productivity100

TransportationOcean,Air

Place of OriginChina

Supply Ability1000

CertificateISO9001-2008,ROHS

HS Code85411000

PortShanghai

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Product Description

Single phase bridge rectifiers 

YZPST-MDQ100-12

 

Single Phase                        IdAV = 100 A

Rectifier Bridge                   VRRM = 1000-2400V


VRRM (V)

VRSM (V)

TYPE

1000

1100

MDQ100-10

1200

1300

MDQ100-12

1600

1700

MDQ100-16

1800

1900

MDQ100-18

2200

2300

MDQ100-22

2400

2500

MDQ100-24











Maximum Ratings

Symbol

Item

Conditions

Ratings

Unit

ID

Output current (D.C.)

Single phase. full wave.  TC=117 oC

100

A

IFSM

Surge Forward Current

1 cycle, 50/60HZ, peak value, non-repetitive

910/1000

A

I2t

I2t

Value for one cycle of surge current

4100

A2S

Tj

Junction Temperature

 

-40 to +150

oC

Tstg

Storage Temperature

 

-40 to +125

oC

VISO

Isolation Breakdown Voltage(R.M.S.)

Main Terminal to case 1minute

2500

V

Md

Mounting torque

Mounting(M6)

Recommended Value2.5-3.9(25-40)

4.7(48)

Nm(kgfcm)

Terminal (M5)

Recommended Value 1.5-2.5(15-25)

2.7(28)


Electrical Characteristics

Symbol

Item

Conditions

Ratings

Unit

IRRM

Repetitive Peak Reverse Current, max.

Tj=150 oCat VRRM

5.0

mA

VFM

Forward Voltage Drop, max.

IFM=100A, Tj=25 oCInst. measurement

1.2

V

Rth(j-c)

Thermal Impedance, max.

Junction to case

0.2

oC/W


 





Product Categories : Semiconductor Module Devices > Bridge Rectifier

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