| Unit Price: | USD 0.1 - 0.14 / Piece/Pieces |
|---|---|
| Payment Type: | L/C,T/T,Paypal |
| Incoterm: | FOB,CFR,CIF |
Download:
Basic Info
Model No.: YZPST-BTA208X-600E
Brand: YZPST
Place Of Origin: China
IT(RMS): 8A
VDRM: 600V
VRRM: 600V
VTM: ≤1.5V
ITSM: 80A
I2t: 32A2S
DI/dt: 50A/ μs
Additional Info
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid
Productivity: 1000000000
Transportation: Others,Ocean
Place of Origin: CHINA
Supply Ability: 1000000000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Product Description
BTA208 Series 8A Triacs
YZPST-BTA208X-600E
DESCRIPTION:S complying with UL standards (File ref: E516503).
MAIN FEATURES:
| symbol | value | unit |
| IT(RMS) | 8 | A |
| VDRM/VRRM | 600/800 | V |
| VTM | ≤1.5 | V |
ABSOLUTE MAXIMUM RATINGS:
| Symbol | Parameter | Value | Unit |
| ITSM | Non repetitive surge peak on-state Current (tp=10ms) | 80 | A |
| I2t | (tp=10ms) | 32 | A2S |
| dI/dt | IG=2IGT ，tr≤100ns,Tj=125℃ | 50 | A/ μs |
| IGM | Peak gate current(tp=20us) | 2 | A |
| PG(AV) | Average gate power | 1=0.5 | W |
| Tstg Tj | Storage temperature Operating junction temperature | -40--+125 -40--+125 | ℃ |
| Viso | AC RMS App lied for 1 minute Between lead and case |
1800 | V |
| I2t value for fusing (tp=10ms) | I2t | 32 | A2s |
| Critical rate of rise of on-state current(IG=2 × IGT) | dI/dt | 50 | A/ μs |
| Peak gate current | IGM | 4 | A |
| Average gate power dissipation | PG(AV) | 1 | W |
| Peak gate power | PGM | 5 | W |
ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)
| Parameter | Value | |||||||
| Test Condition | Quadrant | TW | SW | CW | BW | Unit | ||
| IGT | VD=12V, | 5 | 10 | 35 | 50 | mA | ||
| VGT | RL=33Ω | Ⅰ- Ⅱ-Ⅲ | MAX | 1.5 | V | |||
| VGD | VD=VDRM | Ⅰ- Ⅱ-Ⅲ | MIN | 0.2 | V | |||
| IH | IT=100mA | MAX | 10 | 20 | 40 | 60 | mA | |
| Ⅰ-Ⅲ | 20 | 25 | 50 | 70 | ||||
| IL | IG=1.2IGT | Ⅱ | MAX | 25 | 35 | 70 | 90 | mA |
| VD=2/3VDRM Tj=125℃ Gate open | ||||||||
| dV/dt | MIN | 50 | 200 | 500 | 1000 | V/ µs | ||
|
|
| Ⅱ |
| 70 | 90 |
|
|
dV/dt | VD=2/3VDRM Tj=125℃ Gate open |
MIN |
200 |
500 |
V/ µs | |
STATIC CHARACTERISTICS
| Symbol | Test Condition | Value | Unit | ||
| VTM | ITM=11A tp=380μs | Tj=25℃ | MAX | 1.5 | V |
| IDRM | Tj=25℃ | 5 | µA | ||
| IRRM | VDRM= VRRM | Tj= 125℃ | MAX | 1 | mA |
PACKAGE MECHANICAL DATA
Product Categories : Semiconductor Plastic Package > Bi Directions Thyristor (Triac)
Hot Products
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Fill in more information so that we can get in touch with you faster
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Contact Now
