| Unit Price: | USD 2.9 - 5 / Piece/Pieces |
|---|---|
| Payment Type: | L/C,T/T,Paypal |
| Incoterm: | FOB,CFR,CIF |
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Basic Info
Model No.: YZPST-BTA25-600BW TG25C60
Brand: YZPST
Place Of Origin: China
IT RMS: 25A
ITSM: 300/330A
I2t: 450A2S
PGM: 10W
PGAV: 1W
IGM: 3A
VGM: 10V
Di/dt: 50A/μS
Additional Info
Productivity: 1000000000
Transportation: Ocean,Land,Express,Others
Place of Origin: CHINA
Supply Ability: 1000000000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Product Description
YZPST-TG25..SERIES
YZPST-BTA25-600BW TG25C60
TRIAC (ISOLATED TYPE)
TG25C/E/D are isolated molded triacs suitable for wide range of applications like copier, microwave oven, solid state switch,
motor control, light control and heater control.
IT AV 25A
High surge capability 400A
Isolated Nounting AC2500V
Tab Terminals
Maximum Ratings
Symbol Item Conditions Ratings Unit IT RMS R.M.S. On-State Current Tc 25 A ITSM Surge On-State Current One cycle, 50Hz/60Hz, peak, non-repetitive 300/330 A I2t I2t Value for one cycle of surge current 450 A2S PGM Peak Gate Power Dissipation 10 W PGAV Average Gate Power Dissipation 1 W IGM Peak Gate Current 3 A VGM Peak Gate Voltage 10 V di/dt Critical Rate of Rise of On-State Current IG=100mA,Tj=25 VD=1/2VDRM dIG/dt=1A/μS 50 A/μS Tj Operating Junction Temperature -25～+125 ℃ Tstg Storage Temperature -40～+125 ℃ VISO Isolation Breakdown Voltage R.M.S. A.C. 1 minute 2500 V Mounting Torque M4 Recommended Value 1.0 ～1.4（10～14） 14 kgf.CM
Maximum Ratings
Tj=25 unless otherwise specified
| Symbol | Item | Ratings | Unit | |||
| TG25C60 | TG25C80 | TG25C100 | TG25C12 | V | ||
| VDRM | Repetitive Peak Off-State Voltage | 400 | 800 | 1000 | 1200 | V |
| Symbol | Item | Conditions | Ratings | Unit | |
| IDRM | Reptitive Peak Off-State Current, max | VD=VDRM, Single phase, half wave, Tj=125℃ | 5 | mA | |
| VTM | Peak On-State Voltage, max | On-State Current On-State Current √2X IT (RMS),Inst. measurement | 1.4 | V | |
| I GT1 + | 1 | Gate Trigger Current, max | Tj =25℃, IT=1A, VD=6V | 50 | mA |
| I GT1 - | 2 | Tj =25℃, IT=1A, VD=6V | 50 | mA | |
| I GT3 + | 3 |
| - | mA | |
| I GT3 + | 4 | Tj =25℃, IT=1A, VD=6V | 50 | mA | |
| V GT1+ | 1 | Gate Trigger Voltage, max | Tj =25℃, IT=1A, VD=6V | 3 | V |
| V GT1- | 2 | Tj =25℃, IT=1A, VD=6V | 3 | V | |
| V GT3+ | 3 |
| - | V | |
| V GT3- | 4 | Tj =25℃, IT=1A, VD=6V | 3 |
| |
| VGD | Non-Trigger Gate Voltage, min | Tj =25℃, VD= 1/2VRRM | 0.2 | V | |
| tgt | Turn On Time, max. | IT=(RMS),IG= 100mA,VD=1/2VDR M,Tj=25℃,dIG/dt=1A/μS | 10 | V | |
| dv/dt | Critical Rate of Rise on-State Voltage,min. | Tj=25℃,VD=2/3VDRM Exoponential wave. | 20 | V/μS | |
| (dv/dt) c | Critical Rate of Rise off-State Voltage at commutation, min | Tj=25℃,VD=2/3VDRM di/dtc=15A/μS | 5 | V/μS | |
| IH | Holding Current, typ. | Tj =25℃ | 30 | mA | |
| Rth(j-c) | Thermal Impedance, max | Junction to case | 1.5 | ℃/W | |
Product Categories : Semiconductor Plastic Package > Bi Directions Thyristor (Triac)
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