| Unit Price: | USD 0.06 - 0.08 / Piece/Pieces |
|---|---|
| Payment Type: | L/C,T/T,Paypal |
| Incoterm: | FOB,CFR,CIF |
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Basic Info
Model No.: YZPST-BTA204X-800C
Brand: YZPST
Place Of Origin: China
IT(RMS): 4A
VDRM: 800V
VRRM: 800V
ITSM: 25A
I2t: 3.1A2S
IGM: 2A
VGM: 5V
Additional Info
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid
Productivity: 1000000000
Transportation: Ocean,Land,Express,Others
Place of Origin: CHINA
Supply Ability: 10000000000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Product Description
YZPST-BTA204X-800C
TO-220F 800V BTA204X-800C triac
TO-220F
| Symbol | Value | Unit |
| IT(RMS) | 4 | A |
| VDRM / VRRM | ≥800 | V |
| ITSM | 25 | A |
Absolute ratings (Limiting Values)
| Symbol | Parameter | Value | Unit |
| IT (RMS) | Rms on-state current(full sine wave) | 4 | A |
| ITSM
| Non- repetitive Peak on-state Current (Tj=25℃,tp=20ms) | 25
| A
|
| I2t | I2t for fusing(tp=10ms) | 3.1 | A2S |
| IGM | Peak gate current | 2 | A |
| VGM | Peak gate voltage | 5 | V |
| PGM | Peak gate power | 5 | W |
| PG(AV) | Average gate power | 0.5 | W |
| di/dt
| Repetitive rate of rise of on-state current after triggering (IT=6A,IG=0.2A,dlG/dt=0.2A/us) | 100
| A/μs
|
| Tstg Tj | Storage temperature Operating junction temperature | -40--+150 -40--+110 | ℃ |
| Symbol | Parameter | Condition | Min | Type | Max | Unit |
| Rth j-mb | Thermal Resistance, Junction to mb | One cycle Half cycle | —— —— | —— —— | 3.0 3.7 | K/W K/W |
| Rth j-a
| Thermal Resisatance,Junction to ambient | in free air
| ——
| 60
| ——
| K/W
|
Electrical characteristics (Tj=25℃ unless otherwise stated)
| Symbol | Conditions | Min | Type | Max | Unit | |
|
| BT204- |
|
|
|
| |
|
| VD=12V IT=0.1A T2+ G+ |
|
|
| ||
|
| T2+ G- |
| 35 | mA | ||
| IGT | T2- G- | —— | 35 | mA | ||
|
|
| —— | 35 | mA | ||
|
|
| —— |
|
| ||
| IH | VD=12V IGT=0.1A |
| 2 | 12 | mA | |
| IL | IG=2×IGT | Ⅰ-Ⅲ |
|
| 6 | mA |
| Ⅱ |
|
| 9 | |||
| VTM | IT=8A | —— | 1.25 | 1.7 | V | |
| IDRM | V DRM=600V |
|
| 10 | μA | |
| IRRM | VRRM=600V |
|
| 10 | μA | |
|
| VD=12V IT=0.1A | | 0.7 | | V | |
| VGT | VD=400V IT=0.1A | 0.25 | 0.4 | 1.5 | V | |
|
| Tj=125℃ |
|
|
|
| |
|
| VD=VDRM（MAX） |
|
|
| mA | |
| ID | Tj=125℃ | —— | 0.1 | 0.5 | ||
Dynamic characteristics (Tj=25℃ unless otherwise stated)
| Symbol | Conditions | Min | Type | Max | Unit |
| dVD/dt
| VDM=67%VDm（MAX） Tj=125℃ | 30
| | | V/μs
|
| tgt
| ITm=12A VD=VDRM（MAX） IG=0.1A dlG/dt=5A/ms | | 2
| ——
| μs
|
PACKAGE MECHANICAL DATA
Product Categories : Semiconductor Plastic Package > Bi Directions Thyristor (Triac)
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