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Home > Products > Semiconductor Plastic Package > Bi Directions Thyristor (Triac) > 12A 800V BT138-800E TO-220C Triac with low holding and latching current
12A 800V BT138-800E TO-220C Triac with low holding and latching current
12A 800V BT138-800E TO-220C Triac with low holding and latching current
12A 800V BT138-800E TO-220C Triac with low holding and latching current
12A 800V BT138-800E TO-220C Triac with low holding and latching current
12A 800V BT138-800E TO-220C Triac with low holding and latching current
  • 12A 800V BT138-800E TO-220C Triac with low holding and latching current
  • 12A 800V BT138-800E TO-220C Triac with low holding and latching current
  • 12A 800V BT138-800E TO-220C Triac with low holding and latching current
  • 12A 800V BT138-800E TO-220C Triac with low holding and latching current
  • 12A 800V BT138-800E TO-220C Triac with low holding and latching current

12A 800V BT138-800E TO-220C Triac with low holding and latching current

    Unit Price: USD 0.1 - 0.13 / Piece/Pieces
    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF

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Basic Info

Model No.YZPST-BT138-800E

BrandYZPST

Place Of OriginChina

IT(RMS)12A

VDRM/VRRM600/800V

VTM≤1.6V

Tstg-40~150℃

Tj-40~125℃

ITSM120A

I2t45A2s

Additional Info

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity100000000

TransportationOcean,Land,Air

Place of OriginCHINA

Supply Ability1000000000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Product Description

BT138 Series 12A Triacs

YZPST-BT138-800E

DESCRIPTION

With low holding and latching current, BT138

Series triacs are especially recommended for

use on middle and small resistance type power

load.

YZPST-BT138-800E


MAIN FEATURES:

symbol

value

unit

IT(RMS)

12

A

VDRM/VRRM

600/800

V

VTM

≤1.6

V

ABSOLUTE MAXIMUM RATINGS:

Parameter

Symbol

Value

Unit

Storage junction temperature range

Tstg

-40~150

Operating junction temperature range

Tj

-40~125

Repetitive peak off-state voltage (Tj=25)

VDRM

600/800

V

Repetitive peak reverse voltage (Tj=25)

VRRM

600/800

V

RMS on-state current

IT(RMS)

12

A

Non repetitive surge peak on-state current

(full cycle, F=50Hz)

 

ITSM

 

120

 

A

I2t value for fusing (tp=10ms)

I2t

45

A2s

Critical rate of rise of on-state current (IG=2 × IGT) - - 50
dI/dt 10 A/ μs
Peak gate current IGM 2 A
Average gate power dissipation PG(AV) 0.5 W
Peak gate power PGM 5 W

ELECTRICAL CHARACTERISTICS (Tj=25unless otherwise specified)

3 Quadrants

Parameter Value
Test Condition Quadrant SW CW BW Unit
IGT 10 35 50 mA
VGT VD=12V, RL=33Ω - - MAX 1.3 V
VGD VD=VDRM Tj=125 - - MIN 0.2 V
IH IT=100mA MAX 10 40 60 mA
- 30 50 70
IL IG=1.2IGT MAX 40 60 80 mA
VD=2/3VDRM   Tj=125
dV/dt Gate open MIN 200 500 1000 V/ µs

4 Quadrants

Parameter Value
Test Condition Quadrant D E F G Unit
Ⅰ- Ⅱ-Ⅲ 5 10 25 50
IGT 10 25 70 100 mA
VGT VD=12V, RL=33Ω Ⅰ- Ⅱ-Ⅲ-Ⅳ MAX 1.3 V
VGD VD=VDRM Ⅰ- Ⅱ-Ⅲ-Ⅳ MIN 0.2 V
IH IT=100mA MAX 10 20 40 60 mA

PACKAGE MECHANICAL DATA

TO-220C

Product Categories : Semiconductor Plastic Package > Bi Directions Thyristor (Triac)

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