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Home > Products > Semiconductor Plastic Package > Bi Directions Thyristor (Triac) > BT136 Series 4A Triac with low holding and latching current
BT136 Series 4A Triac with low holding and latching current
BT136 Series 4A Triac with low holding and latching current
BT136 Series 4A Triac with low holding and latching current
BT136 Series 4A Triac with low holding and latching current
BT136 Series 4A Triac with low holding and latching current
  • BT136 Series 4A Triac with low holding and latching current
  • BT136 Series 4A Triac with low holding and latching current
  • BT136 Series 4A Triac with low holding and latching current
  • BT136 Series 4A Triac with low holding and latching current
  • BT136 Series 4A Triac with low holding and latching current

BT136 Series 4A Triac with low holding and latching current

    Unit Price: USD 0.06 - 0.08 / Piece/Pieces
    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF

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Basic Info

Model No.YZPST-BT136

BrandYZPST

Place Of OriginChina

IT(RMS)4A

VDRM/VRRM600/800V

VTM≤1.7V

Tstg-40~150℃

Tj-40~125℃

ITSM25A

I2t3.1A2s

Additional Info

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity1000000000

TransportationLand,Ocean,Express,Others

Place of OriginCHINA

Supply Ability1000000000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Product Description

P/N: YZPST-BT136 Series 4A Triacs
DESCRIPTION:

With low holding and latching current, BT136 Series triacs are especially recommended for    use on middle and small resistance type power load.

YZPST-BT136 TO-220


MAIN FEATURES:

symbol

value

unit

IT(RMS)

4

A

VDRM/VRRM

600/800

V

VTM

≤1.7

V

ABSOLUTE MAXIMUM RATINGS:

Parameter Symbol Value Unit
Storage junction temperature range Tstg -40~150
Operating junction temperature range Tj -40~125
Repetitive peak off-state voltage (Tj=25) VDRM 600/800 V
Repetitive peak reverse voltage (Tj=25) VRRM 600/800 V
RMS on-state current IT(RMS) 4 A
Non repetitive surge peak on-state current
(full cycle, F=50Hz) ITSM 25 A
I2t value for fusing (tp=10ms) I2t 3.1 A2s
Critical rate of rise of on-state current (IG=2 × IGT) - - 50
dI/dt 10 A/ μs
Peak gate current IGM 2 A
Average gate power dissipation PG(AV) 0.5 W
Peak gate power PGM 5 W

ELECTRICAL CHARACTERISTICS (Tj=25unless otherwise specified)

Parameter Value
Test Condition Quadrant T D E Unit
Ⅰ- Ⅱ-Ⅲ 5 5 10
IGT VD=12V, 5 10 25 mA
VGT RL=33Ω Ⅰ- Ⅱ-Ⅲ-Ⅳ MAX 1.3 V
VGD VD=VDRM Ⅰ- Ⅱ-Ⅲ-Ⅳ MIN 0.2 V
IH IT=100mA MAX 5 10 20 mA
Ⅰ-Ⅲ-Ⅳ 8 10 20
IL IG=1.2IGT MAX 12 15 35 mA
VD=0.66×VDRM   Tj=125 Gate open
dV/dt MIN 10 20 50 V/ µs

STATIC CHARACTERISTICS

Symbol Test Condition Value Unit
VTM ITM=5A   tp=380μs Tj=25 MAX 1.7 V
IDRM Tj=25 5 µA
IRRM VDRM= VRRM Tj= 125 MAX 0.5 mA


THERMAL RESISTANCES

Symbol Test Condition Value Unit
TO-252-4R 2.8
Rth(j-c) junction to case(AC) TO-220B(Non-Ins)/ TO-220C 2.6 /W

PACKAGE MECHANICAL DATA

TO-220B

Product Categories : Semiconductor Plastic Package > Bi Directions Thyristor (Triac)

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