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YANGZHOU POSITIONING TECH CO., LTD.

Company Details

YANGZHOU POSITIONING TECH CO., LTD.

[Jiangsu,China]

Business Type:Trade Company , Distributor/Wholesaler , Manufacturer , Service

Main Markets: Africa , Americas , Asia , Europe , Worldwide

Exporter:91% - 100%

Certs:ISO9001, REACH, RoHS, Test Report, UL

Description:TO-220P Triac BT139,Triac Applications BT139,16A Triac BT139

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Home > Products > Semiconductor Plastic Package > Bi Directions Thyristor (Triac) > TO-220P 16A triac BT139 applications

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TO-220P 16A triac BT139 applications

Payment Type:	L/C,T/T,Paypal
Incoterm:	FOB,CFR,CIF

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Basic Info

Model No.: YZPST-BT139

Brand: YZPST

Additional Info

Productivity: 1000

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 10000

Certificate: ISO9001-2008,ROHS

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Product Description

Triac YZPST-BD139

●General description

Passivated triacs in a TO-220P Plastic Package. intended for use in applications requiring high bidirectional transient and blocking voltage capability

● Package TO-220P

●Main Feature (Tj=25℃)

Symbol	Value	Unit
I_T_(RMS)	16	A
V_DRM / V_RRM	≥600	V
I_TSM	140	A

Symbol	Parameter	Value		Unit
I_T(RMS)	RMS on-state current(full sine wave)	16		A
I_TSM	Non- repetitive Peak on-state Current (full cycle,T_j=25℃,F=50Hz,tp=20ms)	140		A
I²t	I²t Value for fusing(tp=10ms)	98		A²S
IGM	Peak gate current	2		A
VGM		5		V
PGM		5		W
PG(AV)	Average gate power	0.5		W
di/dt	Repetitive rate of rise of on-state current after triggering (I_T=6A,I_G=0.2A,dI_G/dt=0.2A/μs)	Ⅰ-Ⅱ-Ⅲ	50	A/μs
di/dt		Ⅳ	10	A/μs
Tstg Tj	Storage temperature Operating junction temperature	-40--+150 -40--+125		℃

●Absolute ratings (Limiting Values)

●Thermai Resistances

Symbol

Parameter

Conditions

Min

Type

Max

Unit

Rth j-mb

Thermal Resisatance,Junction to mb

One cycle

Half cycle

4.0

1.7

K/W

Rth j-a

Thermal Resisatance,Junction to ambient

K/W

●Electrical characteristics (Tj=25℃ unless otherwise stated)

Symbol	Test Conditions	Min	Type	Max	Unit
I_GT	V_D=12V R_L=30Ω T2+ G+ T2+ G- T2- G-	-- -- --	10 15 20	10 25 25	mA mA mA
I_H	V_D=12V I_GT=0.1A		6	50	mA
V_TM	I_T=20A	--	1.3	1.7	V
I_DRM	V_DRM=520V			20	μA
I_RRM	V_RRM=520V			20	μA
V_GT	V_D=12V R_L=30Ω		0.7	1.65	V
I_D	V_D=V_DRM(_MAX) Tj=125℃	--	0.1	0.5	mA