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August 12, 2024
Advances in GaN technology have driven devices to operate at higher power, supply voltages, and frequencies. As shown in Figure 1, Qorvo's QPD1013 transistor uses 0.50 μm GaN-on-SiC technology. It is...
The basic working principle of BJT is reflected in the interaction between the emitter junction (J1) and the collector junction (J2). When the base of the BJT is suspended or shorted to the emitter...
Supply 0603 blue LED Power Conversion Corporation EPC (EPC) and 450 V is usually announced in enhancement mode power transistor off state (EPC2027), can be used in applications requiring high...
Researchers from Purdue University and Harvard University have created a new type of transistor that uses materials that are expected to replace silicon and use a three-dimensional structure rather...
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August 12, 2024
May 07, 2019
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Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.