New Materials 3D Transistors Expect to Bring More Efficient Chips, Lighter Notebooks

Researchers from Purdue University and Harvard University have created a new type of transistor that uses materials that are expected to replace silicon and use a three-dimensional structure rather than a traditional flat plate structure.

This transistor allows engineers to develop faster, more integrated and more efficient integrated circuits, and then design thinner and lighter notebooks that emit far less heat than they currently have. These transistors contain many nanotubes made of indium gallium arsenide, and do not use traditional material silicon.

The production process employs a so-called top-down approach, similar to the industrial process in which the original part is accurately etched and fixed on the transistor, and is expected to be adopted by the industry due to compatibility with traditional processes.

A new generation of silicon chips will be introduced tomorrow. Vertical structures will be adopted instead of flat panels. However, due to the limited mobility of silicon, there is an urgent need for a new, more fluid material to replace silicon.

The Group III material, indium gallium arsenide, is one of the candidate semiconductors and Purdue University has made the world's first 3D gate-all-around transistor.

In addition, the Group III alloy nanotubes will reduce the gate length to 10 nanometers, which is 5 times faster than silicon.

The study was conducted jointly by Purdue University and Harvard University. The relevant paper will be published this month at the International Electron Devices Meeting in Washington.